Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs von Malmros, A, Blanck, H, Rorsman, N

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Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results von Li, X., Bergsten, J., Nilsson, D., Danielsson, Ö., Pedersen, H., Rorsman, N., Janzén, E., Forsberg, U.

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Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties von Papamichail, A., Persson, A. R., Richter, S., Stanishev, V., Armakavicius, N., Kühne, P., Guo, S., Persson, P. O. Å., Paskov, P. P., Rorsman, N., Darakchieva, V.

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Mg-doping and free-hole properties of hot-wall MOCVD GaN von Papamichail, A., Kakanakova-Georgieva, A., Sveinbjörnsson, E. Ö., Persson, A. R., Hult, B., Rorsman, N., Stanishev, V., Le, S. P., Persson, P. O. Å., Nawaz, M., Chen, J. T., Paskov, P. P., Darakchieva, V.

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Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers von Papamichail, A., Persson, A. R., Richter, S., Kühne, P., Stanishev, V., Persson, P. O. Å., Ferrand-Drake Del Castillo, R., Thorsell, M., Hjelmgren, H., Paskov, P. P., Rorsman, N., Darakchieva, V.

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Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC von Khosa, R. Y., Thorsteinsson, E. B., Winters, M., Rorsman, N., Karhu, R., Hassan, J., Sveinbjörnsson, E. Ö.

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High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes von Winters, M., Thorsell, M., Strupiński, W., Rorsman, N.

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Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures von Bergsten, J, Malmros, A, Tordjman, M, Gamarra, P, Lacam, C, di Forte-Poisson, M-A, Rorsman, N

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Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure cap... von Fagerlind, M., Allerstam, F., Sveinbjörnsson, E. Ö., Rorsman, N., Kakanakova-Georgieva, A., Lundskog, A., Forsberg, U., Janzén, E.

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Tuning epitaxial graphene sensitivity to water by hydrogen intercalation von Melios, C, Winters, M, Strupiński, W, Panchal, V, Giusca, C E, Imalka Jayawardena, K D G, Rorsman, N, Silva, S Ravi P, Kazakova, O

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Graphene self-switching diodes as zero-bias microwave detectors von Westlund, A., Winters, M., Ivanov, I. G., Hassan, J., Nilsson, P.-Å., Janzén, E., Rorsman, N., Grahn, J.

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Hysteresis modeling in graphene field effect transistors von Winters, M., Sveinbjörnsson, E. Ö., Rorsman, N.

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An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design von Sudow, M., Fagerlind, M., Thorsell, M., Andersson, K., Billstrom, N., Nilsson, P.-A., Rorsman, N.

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Insulin inhibits glucagon release by SGLT2-induced stimulation of somatostatin secretion von Vergari, Elisa, Knudsen, Jakob G., Ramracheya, Reshma, Salehi, Albert, Zhang, Quan, Adam, Julie, Asterholm, Ingrid Wernstedt, Benrick, Anna, Briant, Linford J. B., Chibalina, Margarita V., Gribble, Fiona M., Hamilton, Alexander, Hastoy, Benoit, Reimann, Frank, Rorsman, Nils J. G., Spiliotis, Ioannis I., Tarasov, Andrei, Wu, Yanling, Ashcroft, Frances M., Rorsman, Patrik

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Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0001) layers von Hassan, J., Winters, M., Ivanov, I.G., Habibpour, O., Zirath, H., Rorsman, N., Janzén, E.

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A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC von Winters, M., Hassan, J., Zirath, H., Janzén, E., Rorsman, N.

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Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC von Winters, M., Sveinbjörnsson, E. Ö., Melios, C., Kazakova, O., Strupiński, W., Rorsman, N.

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Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies von Winters, M., Habibpour, O., Ivanov, I.G., Hassan, J., Janzén, E., Zirath, H., Rorsman, N.

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Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power von Wadefalk, N., Mellberg, A., Angelov, I., Barsky, M.E., Bui, S., Choumas, E., Grundbacher, R.W., Kollberg, E.L., Lai, R., Rorsman, N., Starski, P., Stenarson, J., Streit, D.C., Zirath, H.

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Thermal Study of the High-Frequency Noise in GaN HEMTs von Thorsell, M., Andersson, K., Fagerlind, M., Sudow, M., Nilsson, P.-A., Rorsman, N.

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