Drain voltage dependent analytical model of tunnel field-effect transistors von Verhulst, Anne S., Leonelli, Daniele, Rooyackers, Rita, Groeseneken, Guido

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InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models von Smets, Quentin, Verreck, Devin, Verhulst, Anne S., Rooyackers, Rita, Merckling, Clément, Van De Put, Maarten, Simoen, Eddy, Vandervorst, Wilfried, Collaert, Nadine, Thean, Voon Y., Sorée, Bart, Groeseneken, Guido, Heyns, Marc M.

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Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature von Ghedini Der Agopian, Paula, Martino, Joao Antonio, Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Claeys, Cor

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Temperature impact on the tunnel fet off-state current components von Agopian, Paula Ghedini Der, Martino, Márcio Dalla Valle, Filho, Sebastião Gomes dos Santos, Martino, João Antonio, Rooyackers, Rita, Leonelli, Daniele, Claeys, Cor

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Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors von Kao, Kuo-Hsing, Verhulst, Anne S., Rooyackers, Rita, Douhard, Bastien, Delmotte, Joris, Bender, Hugo, Richard, Olivier, Vandervorst, Wilfried, Simoen, Eddy, Hikavyy, Andriy, Loo, Roger, Arstila, Kai, Collaert, Nadine, Thean, Aaron, Heyns, Marc M., Meyer, Kristin De

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Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width von Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S, Gendt, Stefan De, Heyns, Marc M, Groeseneken, Guido

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Silicide Engineering to Boost Si Tunnel Transistor Drive Current von Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S, Gendt, Stefan De, Heyns, Marc M, Groeseneken, Guido

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Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using and Anneals von Vandooren, Anne, Walke, Amey M., Verhulst, Anne S., Rooyackers, Rita, Collaert, Nadine, Thean, Aaron V. Y.

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Fabrication and Analysis of a / Heterojunction Line Tunnel FET von Walke, Amey M., Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S., Kuo-Hsing Kao, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhuwalka, Krishna K., Heyns, Marc M., Collaert, Nadine, Thean, Aaron Voon-Yew

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Vertical Nanowire TFET Diameter Influence on Intrinsic Voltage Gain for Different Inversion Conditions von Sivieri, Victor De Bodt, Bordallo, Caio Cesar Mendes, Agopian, Paula Ghedini Der, Martino, Joao Antonio, Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Thean, Aaron, Claeys, Cor

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Silicide Engineering to Boost Si Tunnel Transistor Drive Current von Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S., Gendt, Stefan De, Heyns, Marc M., Groeseneken, Guido

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Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source von Neves, Felipe S., Agopian, Paula G. D., Martino, Joao Antonio, Cretu, Bogdan, Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Voon-Yew Thean, Aaron, Claeys, Cor

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Impact of Line-Edge Roughness on FinFET Matching Performance von Baravelli, E.., Dixit, A.., Rooyackers, R.., Jurczak, M.., Speciale, N., De Meyer, K..

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Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs von de M. Nogueira, Alexandro, G.D. Agopian, Paula, Simoen, Eddy, Rooyackers, Rita, Claeys, Cor, Collaert, Nadine, Martino, Joao A.

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Study of line-TFET analog performance comparing with other TFET and MOSFET architectures von Agopian, Paula Ghedini Der, Martino, João Antonio, Vandooren, Anne, Rooyackers, Rita, Simoen, Eddy, Thean, Aaron, Claeys, Cor

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Analog design with Line-TFET device experimental data: from device to circuit level von Gonçalez Filho, Walter, Simoen, Eddy, Rooyackers, Rita, Claeys, Cor, Collaert, Nadine, Martino, Joao A, Agopian, Paula G D

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Tunnel-FET evolution and applications for analog circuits von Agopian, Paula Ghedini Der, Martino, Joao A, Simoen, Eddy, Rooyackers, Rita, Claeys, Cor

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The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy von Liu, Ziyang, Merckling, Clement, Rooyackers, Rita, Franquet, Alexis, Richard, Olivier, Bender, Hugo, Vila, María, Rubio-Zuazo, Juan, Castro, Germán R., Collaert, Nadine, Thean, Aaron, Vandervorst, Wilfried, Heyns, Marc

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Application Of HCl Gas Phase Etch In The Production Of Novel Devices von Hikavyy, Andriy Y., Rooyackers, Rita, Verheyen, Peter, Leys, Frederik, Vellianitis, Georgios, Van Dal, Mark J., Lander, Rob, Loo, Roger

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The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of In x Ga 1– x As nTFETs von Bordallo, Caio C. M., Martino, Joao Antonio, Agopian, Paula G. D., Alian, Alireza, Mols, Yves, Rooyackers, Rita, Vandooren, Anne, Verhulst, Anne S., Simoen, Eddy, Claeys, Cor, Collaert, Nadine

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