High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic Application von Yang, Jiayin, Hu, Huiyong, Miao, Yuanhao, Dong, Linpeng, Wang, Bin, Wang, Wei, Xuan, Rongxi

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Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process von Xue, Xiaohuan, Xuan, Rongxi, Song, Jianjun

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Enhanced electroluminescence from a free-standing tensilely strained germanium nanomembrane light-emitting diode von Chen, Jingming, Shu, Bin, Wu, Jibao, Fan, Linxi, Zhang, Heming, Hu, Huiyong, Xuan, Rongxi, Song, Jianjun

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High rectification efficiency direct bandgap Ge1−xSnx Schottky diode for microwave wireless power transfer von Song, Jianjun, Zhao, Xinyan, Wu, Xuemei, Xuan, Rongxi

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Valence band structure of strained Si/(111)Si1−xGex von Song, JianJun, Zhang, HeMing, Hu, HuiYong, Dai, XianYing, Xuan, RongXi

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High rectification efficiency direct bandgap Ge1−x Sn x Schottky diode for microwave wireless power transfer von Song, Jianjun, Zhao, Xinyan, Wu, Xuemei, Rongxi Xuan

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Averaged hole mobility model of biaxially strained Si von 宋建军 朱贺 杨晋勇 张鹤鸣 宣荣喜 胡辉勇

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Hole effective mass in strained Si (111) von Hu, HuiYong, Zhang, HeMing, Song, JianJun, Xuan, RongXi, Dai, XianYing

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Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering von Miao, Yuanhao, Wang, Yibo, Hu, Huiyong, Liu, Xiangyu, Su, Han, Zhang, Jing, Yang, Jiayin, Tang, Zhaohuan, Wu, Xue, Song, Jianjun, Xuan, Rongxi, Zhang, Heming

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Valence band structure of strained Si/(111)Si1−x Ge x von Song, JianJun, Zhang, HeMing, Hu, HuiYong, Dai, XianYing, Xuan, RongXi

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Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit von Zhao, Xin-Yan, Song, Jianjun, Wu, Xue-Mei, Liu, Wei-Feng, Xuan, Rongxi

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Enhanced electroluminescence from a free-standing tensilely strained germanium nanomembrane light-emitting diodeProject supported by the Fundamental Research Funds for the Central... von Chen, Jingming, Shu, Bin, Wu, Jibao, Fan, Linxi, Zhang, Heming, Hu, Huiyong, Xuan, Rongxi, Song, Jianjun

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Research on Electron Mobility Model for Tensile Strained-Si(101) with Properties of Semiconducting Materials von Meng, Nan, Hu, Hui Yong, Zhang, He Ming, Xuan, Rong Xi, Shi, Xu Jia, Wang, Bin

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Calculation of band edge levels of strained Si/(111)Si 1– x Ge x von Jianjun, Song, Heming, Zhang, Huiyong, Hu, Xianying, Dai, Rongxi, Xuan

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Model of Closed-Loop Detection System for Capacitive MEMS Accelerometer and its IC Realization von Xuan, Rong Xi, Zhang, Zheng Yuan, Zhou, Chun Yu, Zhang, Yu Ming, Hu, Hui Yong, Zhang, He Ming, Wang, Guan Yu, Wang, Bin

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Fabrication of high compressive stress silicon nitride membrane in strained silicon technology von Bin Shu, Heming Zhang, Rongxi Xuan, Xianying Dai, Huiyong Hu, Jianjun Song, Liang Liang, Jianan Cui

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Calculation of band edge levels of strained Si/(111)Si1–xGex von Jianjun, Song, Heming, Zhang, Huiyong, Hu, Xianying, Dai, Rongxi, Xuan

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SOI-based CMOS integrated device with strain Ge channel and inverted trapezoidal grid and preparation method of integrated device von SONG JIANJUN, XUAN RONGXI, MIAO YUANHAO, ZHANG HEMING, HU HUIYONG, SHU BIN, LIU XIANGYU

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Inverted trapezoidal grid CMOS integrated device with strain SiGe channel and preparation method of integrated device von SONG JIANJUN, XUAN RONGXI, ZHANG HEMING, HU HUIYONG, SHU BIN, LIU XIANGYU, WANG BIN

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SOI-based strained-Si-channel inverted-trapezoid-grid CMOS integrated device and preparation method thereof von SONG JIANJUN, XUAN RONGXI, ZHANG HEMING, HU HUIYONG, SHU BIN, LIU XIANGYU, WANG BIN

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