Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds von Brunkov, P. N., Gutkin, A. A., Rudinsky, M. E., Ronghin, O. I., Sitnikova, A. A., Shakhmin, A. A., Ber, B. Ya, Kazantsev, D. Yu, Egorov, A. Yu, Zemlyakov, V. E., Konnikov, S. G.

Volltext