Development of aluminum chemical mechanical planarization von RONAY, Maria

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Two gates are better than one [double-gate MOSFET process] von Solomon, P.M., Hovel, H.J., Bucchignano, J.J., Cabral, C., Lavoie, C., Ku, V., Boyd, D.C., Petrarca, K., Yoon, J.H., Babich, I.V., Treichler, J., Guarini, K.W., Kozlowski, P.M., Newbury, J.S., D'Emic, C.P., Sicina, R.M., Benedict, J., Wong, H.-S.P., Zhang, Y., Chan, K., Jones, E.C., Cohen, G.M., Krasnoperova, A., Ronay, M., Dokumaci, O.

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Teller ‘Exiled’ Himself for Science von Ronay, Maria

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Second-order normal force brought about by polishing with a polyurethane pad von RONA, Maria

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Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond ( invited) von Schnabel, R.F, Clevenger, L.A, Costrini, G, Dobuzinsky, D.M, Filippi, R, Gambino, J, Lee, G.Y, Iggulden, R.C, Lin, C, Lu, Z.G, Ning, X.J, Ramachandran, R, Ronay, M, Többen, D, Weber, S.J

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Advanced metallization technology for 256M DRAM von Kücher, P., Aochi, H., Gambino, J., Licata, T., Matsuda, T., Nguyen, S., Okazaki, M., Palm, H., Ronay, M.

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Second-Order Normal Force and Extension Brought About by Sliding Friction of a Rubbery Polymer von Ronay, Maria, Rohn, Charles L

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New insight into silicide formation: The creation of silicon self-interstitials von Ronay, M, Schad, RG

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Reducing the grain size of polycrystalline lead films by the use of barriers to grain growth von RONAY, M, SERRANO, C. M

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Reinvestigation of first phase nucleation in planar metal-Si reaction couples von Ronay, Maria

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Possible role of the alkaline-earth ions in high-temperature superconductivity von RONAY, M, NEWNS, D. M

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Enhancement of Si oxidation by cerium overlayers and formation of cerium silicate von HILLEBRECHT, F. U, RONAY, M, RIEGER, D, HIMPSEL, F. J

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Determination of the dynamic surface tension of inks from the capillary instability of jets von Ronay, Maria

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New insight into silicide formation: the creation of silicon self-interstitial von RONAY, M, SCHAD, R. G, SCHAD

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Yield stress of thin f.c.c. polycrystalline metal films bonded to rigid substrates von Ronay, Maria

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Triple-self-aligned, planar double-gate MOSFETs: devices and circuits von Guarini, K.W., Solomon, P.M., Zhang, Y., Chan, K.K., Jones, E.C., Cohen, G.M., Krasnoperova, A., Ronay, M., Dokumaci, O., Bucchignano, J.J., Cabral, C., Lavoie, C., Ku, V., Boyd, D.C., Petrarca, K.S., Babich, I.V., Treichler, J., Kozlowski, P.M., Newbury, J.S., D'Emic, C.P., Sicina, R.M., Wong, H.-S.

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Hole formation in orthorhombic and tetragonal YBa2Cu von Ronay, M

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Hole Fomation in Orthorhombic and Tetragonal YBa sub 2 Cu sub 3 O sub 7--x von Ronay, M

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Determination of the Dynamic Surface Tension of Liquids from the Instability of Excited Capillary Jets and from the Oscillation Frequency of Drops Issued from Such Jets von Ronay, Maria

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Reducing the Grain Size of Polycrystalline Lead Films by the Use of AuIn sub 2 Barriers to Grain Growth von Bright, A A, Ronay, M

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