n-Type polysilicon passivating contact for industrial bifacial n-type solar cells von Stodolny, M.K., Lenes, M., Wu, Y., Janssen, G.J.M., Romijn, I.G., Luchies, J.R.M., Geerligs, L.J.

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The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD von Verlaan, V., Verkerk, A.D., Arnoldbik, W.M., van der Werf, C.H.M., Bakker, R., Houweling, Z.S., Romijn, I.G., Borsa, D.M., Weeber, A.W., Luxembourg, S.L., Zeman, M., Dekkers, H.F.W., Schropp, R.E.I.

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Temperature effects of bifacial modules: Hotter or cooler? von Lamers, M.W.P.E., Özkalay, E., Gali, R.S.R., Janssen, G.J.M., Weeber, A.W., Romijn, I.G., Van Aken, B.B.

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Deposition of device quality silicon nitride with ultra high deposition rate (> 7 nm/s) using hot-wire CVD von Verlaan, V., Houweling, Z.S., van der Werf, C.H.M., Romijn, I.G., Weeber, A.W., Goldbach, H.D., Schropp, R.E.I.

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“Zero-charge” SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition von van de Loo, B.W.H., Knoops, H.C.M., Dingemans, G., Janssen, G.J.M., Lamers, M.W.P.E., Romijn, I.G., Weeber, A.W., Kessels, W.M.M.

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17.9% Metal-wrap-through mc-Si cells resulting in module efficiency of 17.0 von Lamers, M. W. P. E., Tjengdrawira, C., Koppes, M., Bennett, I. J., Bende, E. E., Visser, T. P., Kossen, E., Brockholz, B., Mewe, A. A., Romijn, I. G., Sauar, E., Carnel, L., Julsrud, S., Naas, T., de Jong, P. C., Weeber, A. W.

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Multi-crystalline Si solar cells with very fast deposited (180 nm/min) passivating hot-wire CVD silicon nitride as antireflection coating von Verlaan, V., van der Werf, C. H. M., Houweling, Z. S., Romijn, I. G., Weeber, A. W., Dekkers, H. F. W., Goldbach, H. D., Schropp, R. E. I.

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Effect of Al Contact Pitch on Rear Passivated Solar Cells von Cesar, I., Mewe, A.A., Manshanden, P., Romijn, I.G., Janßen, L., Weeber, A.W.

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Deposition of device quality silicon nitride with ultra high deposition rate (> 7 nm/s) using hot-wire CVD von Verlaan, V, Houweling, Z.S, van der Werf, C.H.M, Romijn, I.G, Schropp, R.E.I, Goldbach, H.D

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The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD von Dekkers, H.F.W, Zeman, M, Verlaan, V, Verkerk, A.D, Arnoldbik, W.M, van der Werf, C.H.M, Bakker, R, Houweling, Z.S, Romijn, I.G, Borsa, D.M, Luxembourg, S.L, Schropp, R.E.I

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Scaling of the sub-THz conductivity at the light-induced metal–insulator transition in von Pronin, A.V., Romijn, I.G., Brom, H.B., Hoekstra, A.F.Th

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Scaling of the sub-THz conductivity at the light-induced metal–insulator transition in YH x von Pronin, A.V., Romijn, I.G., Brom, H.B., Hoekstra, A.F.Th

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Extraction of recombination properties from lifetime data von Janssen, G.J.M, Wu, Y, Tool, K.C.J.J, Romijn, I.G, Fell, A

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The fundamental properties of SiN/sub x/:H that determine its passivating qualities von Weeber, A.W., Rieffe, H.C., Romijn, I.G., Sinke, W.C., Soppe, W.J.

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Terahertz spectroscopy: a powerful tool to explore scaling in condensed matter von Pronin, A.V., Romijn, I.G., Brom, H.B.

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Carrier dynamics in conducting polymers: Case of PF6 doped Polypyrrole von Romijn, I.G., Hupkes, H.J., Martens, H.C.F., Brom, H.B., Mukherjee, A., Menon, R.

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Hopping transport in polythiophene versus poly(phenylene vinylene) von Romijin, I.G., Pasveer, W.F., Martens, H.C.F., Brom, H.B., Michels, M.A.J.

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