A C-band high-efficiency second-harmonic-tuned hybrid power amplifier in GaN technology von Colantonio, P., Giannini, F., Giofre, R., Limiti, E., Serino, A., Peroni, M., Romanini, P., Proietti, C.

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Synthesis of partially polarized Gaussian Schell-model sources von Piquero, G., Gori, F., Romanini, P., Santarsiero, M., Borghi, R., Mondello, A.

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Dual step EBL Gate fabrication technology for GaN-HEMT wideband applications von Dominijanni, D., Giovine, E., Notargiacomo, A., Pantellini, A., Romanini, P., Peroni, M., Nanni, A.

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Experimental validation of GaN HEMTs thermal management by using photocurrent measurements von Regoliosi, P., Reale, A., Di Carlo, A., Romanini, P., Peroni, M., Lanzieri, C., Angelini, A., Pirola, M., Ghione, G.

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High-power monolithic AlGaN/GaN HEMT switch for X-band applications von Ciccognani, W., De Dominicis, M., Ferrari, M., Limiti, E., Peroni, M., Romanini, P.

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MMIC Chipset for wideband multifunction T/R Module von Bettidi, A., Carosi, D., Corsaro, F., Marescialli, L., Romanini, P., Nanni, A.

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High-power monolithic AlGaN/GaN HEMT switch for X-band applications von Ciccognani, W, De Dominicis, M, Ferrari, M, Limiti, E, Peroni, M, Romanini, P

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High-power monolithic AIGaN/GaN HEMT switch for X-band applications von CICCOGNANI, W, DE DOMINICIS, M, FERRARI, M, LIMITI, E, PERONI, M, ROMANINI, P

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AC-Band High-Efficiency Second-Harmonic-Tuned Hybrid Power Amplifier in GaN Technology von Giannini, F, Giofre, R, Limiti, E, Serino, A, Peroni, M, Romanini, P, Proietti, C

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MMIC chipset for wideband multifunction T/R Module von Bettidi, A., Carosi, D., Corsaro, F., Marescialli, L., Nanni, A., Romanini, P.

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High power GaN-HEMT microwave switches for X-Band and wideband applications von Bettidi, A., Cetronio, A., De Dominicis, M., Giolo, G., Lanzieri, C., Manna, A., Peroni, M., Proietti, C., Romanini, P.

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Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications von Camarchia, V., Guerrieri, S. Donati, Pirola, M., Teppati, V., Ferrero, A., Ghione, G., Peroni, M., Romanini, P., Lanzieri, C., Lavanga, S., Serino, A., Limiti, E., Mariucci, L.

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High sensitivity CW-cavith ringdown spectroscopy of (CO2)-C-12 near 1.5 µm von Y. Macko P. Romanini D. Teffo J.-L, Ding

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DLTS characterization of silicon nitride passivated AlGaN/GaN heterostructures von Mosca, R., Gombia, E., Passaseo, A., Tasco, V., Peroni, M., Romanini, P.

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Trilayer Electron-beam Lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures von Dominijanni, D, Casini, R, Foglietti, V, Ortolani, M, Notargiacomo, A, Lanzieri, C, Peroni, M, Romanini, P, Giovine, E

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High-sensitivity CW-cavity ringdown spectroscopy of 12CO2 near 1.5 µm von Z. Macko P. Romanini D. Perevalov V.I. Tashkun S.A. Teffo J.L. Campargue A., Majcherova

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Wide bandgap technology: The right solution for Space and Defense market von Lanzieri, C., Pantellini, A., Romanini, P.

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S-band discrete and MMIC GaN power amplifiers von Nilsson, J., Billstrom, N., Rorsman, N., Romanini, P.

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X-band T/R module in state-of-the-art GaN technology von Bettidi, A., Cetronio, A., Cicolani, M., Costrini, C., Lanzieri, C., Maccaroni, S., Marescialli, L., Peroni, M., Romanini, P.

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X-Band GaN-HEMT LNA performance versus robustness trade-off von Bettidi, A., Corsaro, F., Cetronio, A., Nanni, A., Peroni, M., Romanini, P.

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