Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects von Roldan, J.B., Godoy, A., Gamiz, F., Balaguer, M.

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A comprehensive analysis on progressive reset transitions in RRAMs von Villena, M A, Roldán, J B, Jimenez-Molinos, F, Suñé, J, Long, S, Miranda, E, Liu, M

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Formal Cycloadditions Driven by the Homolytic Opening of Strained, Saturated Ring Systems von Harmata, Alexander S., Roldan, B. J., Stephenson, Corey R. J.

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Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach von Rodriguez, N, Maldonado, D, Romero, F J, Alonso, F J, Aguilera, A M, Godoy, A, Jimenez-Molinos, F, Ruiz, F G, Roldan, J B

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An Analytical I- V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects von Roldán, J B, Gamiz, F, Jiménez-Molinos, F, Sampedro, C, Godoy, A, García-Ruiz, Francisco J, Rodriguez, N

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Time-domain numerical modeling of terahertz receivers based on photoconductive antennas von Moreno, E., Hemmat, Z., Roldán, J. B., Pantoja, M. F., Bretones, A. R., García, S. G.

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In-depth analysis and modelling of self-heating effects in nanometric DGMOSFETs von Roldán, J.B., González, B., Iñiguez, B., Roldán, A.M., Lázaro, A., Cerdeira, A.

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On the Numerical Modeling of Terahertz Photoconductive Antennas von Moreno, E., Pantoja, M. F., Ruiz, F. G., Roldán, J. B., García, S. G.

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Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level von Roldán, A., Reig, C., Cubells-Beltrán, M.D., Roldán, J.B., Ramírez, D., Cardoso, S., Freitas, P.P.

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Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs von CHERALATHAN, M, SAMPEDRO, C, ROLDAN, J. B, GAMIZ, F, IANNACCONE, G, SANGIORGI, E, INIGUEZ, B

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Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories von Maldonado, D., Aguirre, F., González-Cordero, G., Roldán, A. M., González, M. B., Jiménez-Molinos, F., Campabadal, F., Miranda, E., Roldán, J. B.

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Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation von Maestro-Izquierdo, M., Gonzalez, M. B., Jimenez-Molinos, F., Moreno, E., Roldan, J. B., Campabadal, F.

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Pseudo-Boltzmann model for modeling the junctionless transistors von Avila-Herrera, F., Cerdeira, A., Roldan, J.B., Sánchez-Moreno, P., Tienda-Luna, I.M., Iñiguez, B.

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Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories von Roldán, J. B., Alonso, F. J., Aguilera, A. M., Maldonado, D., Lanza, M.

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An analytical model for square GAA MOSFETs including quantum effects von Moreno, E., Roldán, J.B., Ruiz, F.G., Barrera, D., Godoy, A., Gámiz, F.

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Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach von Aldana, S, García-Fernández, P, Romero-Zaliz, R, González, M B, Jiménez-Molinos, F, Gómez-Campos, F, Campabadal, F, Roldán, J B

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An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes von Roldán, J.B., Jiménez-Molinos, F., Balaguer, M., Gámiz, F.

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Comprehensive study on unipolar RRAM charge conduction and stochastic features: a simulation approach von Maldonado, D, Gómez-Campos, F M, González, M B, Roldán, A M, Jiménez-Molinos, F, Campabadal, F, Roldán, J B

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Conductance quantization in h-BN memristors von Roldán, J. B., Maldonado, D., Cantudo, A., Shen, Yaqing, Zheng, Wenwen, Lanza, M.

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A new compact model for bipolar RRAMs based on truncated-cone conductive filaments-a Verilog-A approach von González-Cordero, G, Roldan, J B, Jiménez-Molinos, F, Suñé, J, Long, S, Liu, M

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