Hardware implementation of memristor-based artificial neural networks von Aguirre, Fernando, Sebastian, Abu, Le Gallo, Manuel, Song, Wenhao, Wang, Tong, Yang, J. Joshua, Lu, Wei, Chang, Meng-Fan, Ielmini, Daniele, Yang, Yuchao, Mehonic, Adnan, Kenyon, Anthony, Villena, Marco A., Roldán, Juan B., Wu, Yuting, Hsu, Hung-Hsi, Raghavan, Nagarajan, Suñé, Jordi, Miranda, Enrique, Eltawil, Ahmed, Setti, Gianluca, Smagulova, Kamilya, Salama, Khaled N., Krestinskaya, Olga, Yan, Xiaobing, Ang, Kah-Wee, Jain, Samarth, Li, Sifan, Alharbi, Osamah, Pazos, Sebastian, Lanza, Mario

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Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories von Maldonado, D., Aguirre, F., González-Cordero, G., Roldán, A. M., González, M. B., Jiménez-Molinos, F., Campabadal, F., Miranda, E., Roldán, J. B.

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Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories von Roldán, J. B., Alonso, F. J., Aguilera, A. M., Maldonado, D., Lanza, M.

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Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach von Aldana, S, García-Fernández, P, Romero-Zaliz, R, González, M B, Jiménez-Molinos, F, Gómez-Campos, F, Campabadal, F, Roldán, J B

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Comprehensive study on unipolar RRAM charge conduction and stochastic features: a simulation approach von Maldonado, D, Gómez-Campos, F M, González, M B, Roldán, A M, Jiménez-Molinos, F, Campabadal, F, Roldán, J B

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Conductance quantization in h-BN memristors von Roldán, J. B., Maldonado, D., Cantudo, A., Shen, Yaqing, Zheng, Wenwen, Lanza, M.

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Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective von Maldonado, D., Aldana, S., González, M.B., Jiménez-Molinos, F., Ibáñez, M.J., Barrera, D., Campabadal, F., Roldán, J.B.

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Current transient response and role of the internal resistance in HfOx-based memristors von Gonzalez, M. B., Maestro-Izquierdo, M., Jiménez-Molinos, F., Roldán, J. B., Campabadal, F.

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Kinetic Monte Carlo analysis of data retention in Al:HfO2-based resistive random access memories von Aldana, S, Pérez, E, Jiménez-Molinos, F, Wenger, C, Roldán, J B

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Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs von Pérez, E., Maldonado, D., Acal, C., Ruiz-Castro, J.E., Alonso, F.J., Aguilera, A.M., Jiménez-Molinos, F., Wenger, Ch, Roldán, J.B.

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A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs von Aldana, S, García-Fernández, P, Rodríguez-Fernández, Alberto, Romero-Zaliz, R, González, M B, Jiménez-Molinos, F, Campabadal, F, Gómez-Campos, F, Roldán, J B

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Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model von Roldán, J. B., Miranda, E., González-Cordero, G., García-Fernández, P., Romero-Zaliz, R., González-Rodelas, P., Aguilera, A. M., González, M. B., Jiménez-Molinos, F.

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Modeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theory von Calixto, M, Maldonado, D, Miranda, E, Roldán, J B

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Variability in HfO2-based memristors described with a new bidimensional statistical technique von Acal, C, Maldonado, D, Cantudo, A, González, M B, Jiménez-Molinos, F, Campabadal, F, Roldán, J B

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Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices von García, H, Vinuesa, G, García-Ochoa, E, Aguirre, F L, González, M B, Jiménez-Molinos, F, Campabadal, F, Roldán, J B, Miranda, E, Dueñas, S, Castán, H

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Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories von Maldonado, D., Roldán, A.M., González, M.B., Jiménez-Molinos, F., Campabadal, F., Roldán, J.B.

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Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction von Jiménez-Molinos, F., Vinuesa, G., García, H., Tarre, A., Tamm, A., Kalam, K., Kukli, K., Dueñas, S., Castán, H., González, M. B., Campabadal, F., Roldán, J. B.

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An in-depth simulation study of thermal reset transitions in resistive switching memories von Villena, M. A., Jiménez-Molinos, F., Roldán, J. B., Suñé, J., Long, S., Lian, X., Gámiz, F., Liu, M.

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Simulation of thermal reset transitions in resistive switching memories including quantum effects von Villena, M. A., González, M. B., Jiménez-Molinos, F., Campabadal, F., Roldán, J. B., Suñé, J., Romera, E., Miranda, E.

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Losartan impairs HTR-8/SVneo trophoblast migration through inhibition of angiotensin II-induced pro-inflammatory profile in human endometrial stromal cells von Macchi, Rosario, Sotelo, Agustina D., Parrado, Andrea C., Salaverry, Luciana S., Blanco, Guillermo A., Castro, Marisa S., Rey-Roldán, Estela B., Canellada, Andrea M.

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