Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers von Desmaris, V., Rudzinski, M., Rorsman, N., Hageman, P.R., Larsen, P.K., Zirath, H., Rodle, T.C., Jos, H.F.F.

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