Structural and transport properties of Cu/Ta(N)/Cu interfaces in vertical interconnects von Lanzillo, Nicholas A., Clevenger, Lawrence, Robison, Robert R., Edelstein, Daniel C.

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Via resistance and reliability trends in copper interconnects with ultra-scaled barrier layers von Lanzillo, Nicholas A., Motoyama, Koichi, Huang, Huai, Robison, Robert R., Spooner, Terry

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Spin-dependent electron scattering in cobalt interconnects von Lanzillo, Nicholas A, Bhosale, Prasad, Lavoie, Christian, Dechene, Daniel J, Robison, Robert R, Choi, Kisik

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Design of projected phase-change memory mushroom cells for low-resistance drift von Philip, Timothy M., Brew, Kevin W., Li, Ning, Simon, Andrew, Liu, Zuoguang, Ok, Injo, Adusumilli, Praneet, Saraf, Iqbal, Conti, Richard, Ogundipe, Odunayo, Robison, Robert R., Saulnier, Nicole, Sebastian, Abu, Narayanan, Vijay

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Electron Transport Across Cu/Ta(O)/Ru(O)/Cu Interfaces in Advanced Vertical Interconnects von Lanzillo, Nicholas A., Briggs, Benjamin D., Robison, Robert R., Standaert, Theo, Lavoie, Christian

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Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs von Nayfeh, H.M., Rovedo, N., Bryant, A., Narasimha, S., Kumar, A., Xiaojun Yu, Ning Su, Kumar, A., Sleight, J.W., Robison, R.R., Rausch, W., Mallela, H., Freeman, G.

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Hybrid methodology to model random dopant fluctuations in low doped FinFETs von Agarwal, Samarth, Johnson, Jeffrey B., Bajaj, Mohit, Furkay, Stephen S., Oldiges, Philip J., Robison, Robert R., Murali, K. V. R. M.

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First-Principles Evaluation of fcc Ruthenium for its use in Advanced Interconnects von Philip, Timothy M., Lanzillo, Nicholas A., Gunst, Tue, Markussen, Troels, Cobb, Jonathan, Aboud, Shela, Robison, Robert R.

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Leakage Engineering Enabling PDSOI Ring Oscillators Operating in Sub-100pA/µm I off Regime von Ren, Zhibin, Cai, Jin, Robison, Robert R., Jagannathan, Basanth, Park, Dae-Gyu, Ning, Tak H.

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Self aligned replacement metal source/drain FINFET von Robison, Robert R, Vega, Reinaldo A, Alptekin, Emre

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Gate-all-around field effect transistor having multiple threshold voltages von Robison, Robert R, Vega, Reinaldo, Guillorn, Michael A, Hook, Terence, Bao, Ruqiang, Yamashita, Tenko

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First principles evaluation of fcc ruthenium for use in advanced interconnects von Philip, Timothy M, Lanzillo, Nicholas A, Gunst, Tue, Markussen, Troels, Cobb, Jonathan, Aboud, Shela, Robison, Robert R

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SELF ALIGNED REPLACEMENT METAL SOURCE/DRAIN FINFET von Robison, Robert R, Vega, Reinaldo A, Alptekin, Emre

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NANOSHEET FIELD EFFECT TRANSISTORS WITH PARTIAL INSIDE SPACERS von Robison, Robert R, Vega, Reinaldo A, Hook, Terence B, Guillorn, Michael A, Venigalla, Rajasekhar

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Self aligned replacement metal source/drain finFET von Robison, Robert R, Vega, Reinaldo A, Alptekin, Emre

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Nanosheet field effect transistors with partial inside spacers von Robison, Robert R, Vega, Reinaldo A, Hook, Terence B, Guillorn, Michael A, Venigalla, Rajasekhar

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Gate-all-around field effect transistor having multiple threshold voltages von Robison, Robert R, Vega, Reinaldo, Guillorn, Michael A, Hook, Terence, Bao, Ruqiang, Yamashita, Tenko

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SELF ALIGNED REPLACEMENT METAL SOURCE/DRAIN FINFET von Robison, Robert R, Vega, Reinaldo A, Alptekin, Emre

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Self aligned replacement metal source/drain finFET von Robison, Robert R, Vega, Reinaldo A, Alptekin, Emre

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Vertical fin field effect transistor with air gap spacers von Robison, Robert R, Vega, Reinaldo A, Mallela, Hari V, Venigalla, Rajasekhar

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