Universal phonon mean free path spectra in crystalline semiconductors at high temperature von Freedman, Justin P., Leach, Jacob H., Preble, Edward A., Sitar, Zlatko, Davis, Robert F., Malen, Jonathan A.

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Band alignment at AlN/Si (111) and (001) interfaces von King, Sean W., Nemanich, Robert J., Davis, Robert F.

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A Printable Form of Single-Crystalline Gallium Nitride for Flexible Optoelectronic Systems von Lee, Keon Jae, Lee, Jaeseob, Hwang, Heedon, Reitmeier, Zachary J., Davis, Robert F., Rogers, John A., Nuzzo, Ralph G.

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Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates von Liu, Fang, Huang, Li, Kamaladasa, Ranga, Picard, Yoosuf N., Preble, Edward A., Paskova, Tanya, Evans, Keith R., Davis, Robert F., Porter, Lisa M.

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Mg and Al-induced phase transformation and stabilization of Ga2O3-based γ-phase spinels von Tang, Jingyu, Jiang, Kunyao, House, Stephen D., Xu, Chengchao, Xiao, Kelly, Porter, Lisa M., Davis, Robert F.

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Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates von Huang, Li, Liu, Fang, Zhu, Jingxi, Kamaladasa, Ranga, Preble, Edward A., Paskova, Tanya, Evans, Keith, Porter, Lisa, Picard, Yoosuf N., Davis, Robert F.

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Rugged Electrical Power Switching in Semiconductors: A Systems Approach von Shenai, Krishna, Dudley, Michael, Davis, Robert F.

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Thermodynamic calculations for the chemical vapor deposition of hexagonal boron nitride using triethylboron, ammonia, and hydrogen von Jean-Remy, Philip M., Webler, Bryan A., Pistorius, Petrus C., Davis, Robert F.

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Substrates and epitaxial deposition processes for Group III-nitride thin films and power device heterostructures von Davis, Robert F.

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Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces von King, Sean W., Davis, Robert F., Nemanich, Robert J.

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A critical review of ohmic and rectifying contacts for silicon carbide von Porter, Lisa M., Davis, Robert F.

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Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3 von Tang, Jingyu, Jiang, Kunyao, Xu, Chengchao, Cabral, Matthew J., Xiao, Kelly, Porter, Lisa M., Davis, Robert F.

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Characterization of Epitaxial β-(Al,Ga,In)2O3-Based Films and Applications as UV Photodetectors von Lyle, Luke A. M., Okur, Serdal, Chava, Venkata S. N., Kelley, Mathew L., Davis, Robert F., Tompa, Gary S., Chandrashekhar, M. V. S., Greytak, Andrew B., Porter, Lisa M.

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Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface von King, Sean W., Nemanich, Robert J., Davis, Robert F.

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Structural TEM study of nonpolar a-plane gallium nitride grown on (11 20) 4H-SiC by organometallic vapor phase epitaxy von ZAKHAROV, Dmitri N, LILIENTAL-WEBER, Zuzanna, WAGNER, Brian, REITMEIER, Zachary J, PREBLE, Edward A, DAVIS, Robert F

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Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor Power Switching Devices von Shenai, Krishna, Dudley, Michael, Davis, Robert F.

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Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes von Su, Zonghui, Huang, Li, Liu, Fang, Freedman, Justin P., Porter, Lisa M., Davis, Robert F., Malen, Jonathan A.

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The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers von Su, Zonghui, Freedman, Justin P., Leach, Jacob H., Preble, Edward A., Davis, Robert F., Malen, Jonathan A.

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Pendeo-epitaxy : A new approach for lateral growth of gallium nitride films von ZHELEVA, T. S, SMITH, S. A, THOMSON, D. B, LINTHICUM, K. J, RAJAGOPAL, P, DAVIS, R. F

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Cleaning of pyrolytic hexagonal boron nitride surfaces von King, Sean W., Nemanich, Robert J., Davis, Robert F.

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