Versatile in-line transceiver chip operating in two full-duplex modes at 1.3 and 1.55 μm von Nakajima, H., Leroy, A., Charil, J., Robein, D.

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Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion von Ramdane, A., Krauz, P., Rao, E.V.K., Hamoudi, A., Ougazzaden, A., Robein, D., Gloukhian, A., Carre, M.

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Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP von Kazmierski, C., Robein, D., Gao, Y.

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1.5-μm DFB lasers with new current-induced gain gratings von Kazmierski, C., Robein, D., Mathoorasing, D., Ougazzaden, A., Filoche, M.

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New ultra high-speed VUG-SIBH laser structure with 2 ps-RC product von Kazmierski, C., Robein, D., Mathoorasing, D.

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Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration von Hamoudi, A., Rao, E. V. K., Krauz, Ph, Ramdane, A., Ougazzaden, A., Robein, D., Thibierge, H.

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The UMP project

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Experimental study of the hydrogen complexes in indium phosphide von DARWICH, R, PAJOT, B, ROSE, B, ROBEIN, D, THEYS, B, RAHBI, R, PORTE, C, GENDRON, F

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Epitaxial overgrowth on nanometric InP wires processed by reactive ion etching von Izrael, A., Robein, D., Vaudry, C.

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Application of AP MOVPE to a new butt-coupling scheme von Rose, B., Remiens, D., Hornung, V., Robein, D.

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Iron redistribution studies in adjacent acceptor-doped InP layers: application to a new SI-BH laser structure von Robein, D., Kazmierski, C., Mathoorasing, D., Rose, B., Gao, Y.

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Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure von Rose, B., Kazmierski, C., Robein, D., Gao, Y.

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Iron incorporation in InP layers using a ferrocene source in atmospheric pressure MOVPE von Robein, D., Kazmierski, C., Pougnet, A.M., Rose, B.

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Chlorine assisted selective area epitaxy in AP-MOVPE of InP : influence of CCl4 on growth and on Zn and Si incorporation von HÄRLE, V, ROSE, B, ROBEIN, D, GAO, Y, LANDSBECK, E, SCHOLZ, F

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High static performance GaInAs-GaInAsP SCH MQW 1.5 mu m wavelength buried ridge stripe lasers von Kazmierski, C., Ougazzaden, A., Blez, M., Robein, D., Landreau, J., Sermage, B., Bouley, J.C., Mircea, A.

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The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium von MIRCEA, A, MELLET, R, ROSE, B, ROBEIN, D, THIBIERGE, H, LEROUX, G, DASTE, P, GODEFROY, S, OSSART, P, POUGNET, A.-M

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Luminescence of narrow RIE etched In1−xGaxAs/InP and GaAs/Ga1−xAlxAs quantum wires von Marzin, J.Y., Izrael, A., Birotheau, L., Sermage, B., Roy, N., Azoulay, R., Robein, D., Benchimol, J.-L., Henry, L., Thierry-Mieg, V., Ladan, F.R., Taylor, L.

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Versatile in-line transceiver chip operating in two full-duplex modes at 1.3 and 1.55 [mu]m von Nakajima, H, Leroy, A, Charil, J, Robein, D

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Versatile in-line transceiver chip operating in two full-duplex modes at 1.3 and 1.55 mum von Nakajima, H, Leroy, A, Charil, J, Robein, D

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Extremely Low Threshold Butt-Jointed 1.5 µm DBR Lasers von Lesterlin, D., Gilleron, M., Chaminant, G., Robein, D., Bouley, J. C.

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