Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material von Yue, Jin, Prakash, Abhinav, Robbins, Matthew C, Koester, Steven J, Jalan, Bharat

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Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents von Kshirsagar, Chaitanya U, Xu, Weichao, Su, Yang, Robbins, Matthew C, Kim, Chris H, Koester, Steven J

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Right-Angle Black Phosphorus Tunneling Field Effect Transistor von Robbins, Matthew C., Golani, Prafful, Koester, Steven J.

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Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices von Robbins, Matthew C, Namgung, Seon, Oh, Sang-Hyun, Koester, Steven J

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Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene von Anugrah, Yoska, Robbins, Matthew C., Crowell, Paul A., Koester, Steven J.

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Depletion Mode MOSFET Using La-Doped BaSnO 3 as a Channel Material von Yue, Jin, Prakash, Abhinav, Robbins, Matthew C, Koester, Steven J, Jalan, Bharat

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Symmetric complementary logic inverter using integrated black phosphorus and MoS2 transistors von Su, Yang, Kshirsagar, Chaitanya U, Robbins, Matthew C, Haratipour, Nazila, Koester, Steven J

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Black Phosphorus p- and n-MOSFETs With Electrostatically Doped Contacts von Robbins, Matthew C., Koester, Steven J.

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Black Phosphorus p-MOSFETs With 7-nm HfO2 Gate Dielectric and Low Contact Resistance von Haratipour, Nazila, Robbins, Matthew C., Koester, Steven J.

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Atomic and electronic structure of exfoliated black phosphorus von Wu, Ryan J., Topsakal, Mehmet, Low, Tony, Robbins, Matthew C., Haratipour, Nazila, Jeong, Jong Seok, Wentzcovitch, Renata M., Koester, Steven J., Mkhoyan, K. Andre

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Dynamic Memory Cells Using MoS 2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents von Kshirsagar, Chaitanya U., Xu, Weichao, Su, Yang, Robbins, Matthew C., Kim, Chris H., Koester, Steven J.

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Black Phosphorus p-MOSFETs With 7-nm HfO 2 Gate Dielectric and Low Contact Resistance von Haratipour, Nazila, Robbins, Matthew C., Koester, Steven J.

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Symmetric complementary logic inverter using integrated black phosphorus and MoS sub(2) transistors von Su, Yang, Kshirsagar, Chaitanya U, Robbins, Matthew C, Haratipour, Nazila, Koester, Steven J

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Symmetric complementary logic inverter using integrated black phosphorus and MoS 2 transistors von Su, Yang, Kshirsagar, Chaitanya U, Robbins, Matthew C, Haratipour, Nazila, Koester, Steven J

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Posture detection system von SHIN, D, ROBBINS, MATTHEW C, PATEL, SHWETAK

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Black Phosphorus p-MOSFETs with High Transconductance and Nearly Ideal Subthreshold Slope von Haratipour, Nazila, Robbins, Matthew C, Koester, Steven J

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Symmetric Complementary Logic Inverter Using Integrated Black Phosphorus and MoS2 Transistors von Yang, Su, Kshirsagar, Chaitanya U, Robbins, Matthew C, Haratipour, Nazila, Koester, Steven J

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Signal quality dependent throttling of devices for reducing electromagnetic interference von Jaydeep V Ranade, Matthew C Robbins, Orbay Tuncay, Ruben Caballero, Kiavash Baratzadeh

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Signal quality dependent throttling of devices for reducing electromagnetic interference von Robbins, Matthew C, Caballero, Ruben, Ranade, Jaydeep V, Tuncay, Orbay, Baratzadeh, Kiavash

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Signal quality dependent throttling of devices for reducing electromagnetic interference von Jaydeep V Ranade, Matthew C Robbins, Orbay Tuncay, Ruben Caballero, Kiavash Baratzadeh

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