Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes von Monavarian, M., Rashidi, A., Aragon, A. A., Oh, S. H., Rishinaramangalam, A. K., DenBaars, S. P., Feezell, D.

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Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures von Sanford, N. A, Blanchard, P. T, Brubaker, M. D, Rishinaramangalam, A. K, Zhang, Q, Roshko, A, Feezell, D. F, Klein, B. D. B, Davydov, A. V

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Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures von Sanford, N A, Blanchard, P T, Brubaker, M D, Rishinaramangalam, A K, Zhang, Q, Roshko, A, Feezell, D F, Klein, B D B, Davydov, A V

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Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes von Nami, Mohsen, Stricklin, Isaac E., DaVico, Kenneth M., Mishkat-Ul-Masabih, Saadat, Rishinaramangalam, Ashwin K., Brueck, S. R. J., Brener, Igal, Feezell, Daniel F.

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Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes von Rashidi, A., Nami, M., Monavarian, M., Aragon, A., DaVico, K., Ayoub, F., Mishkat-Ul-Masabih, S., Rishinaramangalam, A., Feezell, D.

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Threading defect elimination in GaN nanowires von Hersee, Stephen D., Rishinaramangalam, Ashwin K., Fairchild, Michael N., Zhang, Lei, Varangis, Petros

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Internal quantum efficiency and carrier dynamics in semipolar (20 21 ) InGaN/GaN light-emitting diodes von Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K, Oh, Sang H, DenBaars, Steve P, Liu, Sheng, Brener, Igal, Feezell, Daniel F

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Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy von Nami, Mohsen, Eller, Rhett F, Okur, Serdal, Rishinaramangalam, Ashwin K, Liu, Sheng, Brener, Igal, Feezell, Daniel F

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Advanced Scanning Probe Nanolithography Using GaN Nanowires von Behzadirad, Mahmoud, Mecholdt, Stephan, Randall, John N, Ballard, Joshua B, Owen, James, Rishinaramangalam, Ashwin K, Reum, Alexander, Gotszalk, Teodor, Feezell, Daniel F, Rangelow, Ivo W, Busani, Tito

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Electrically Injected GHz-Class GaN/InGaN Core–Shell Nanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity von Nami, Mohsen, Rashidi, Arman, Monavarian, Morteza, Mishkat-Ul-Masabih, Saadat, Rishinaramangalam, Ashwin. K, Brueck, Steven R. J, Feezell, Daniel

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High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth von Rashidi, Arman, Rishinaramangalam, Ashwin K., Aragon, Andrew A., Mishkat-Ul-Masabih, Saadat, Monavarian, Morteza, Lee, Changmin, Denbaars, Steven P., Feezell, Daniel F.

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GaN/InGaN Blue Light‐Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam‐Assisted Deposition von Tarief Elshafiey, Abdelrahman, DaVico, Kenneth M., Rishinaramangalam, Ashwin K., Rashidi, Arman, Aragon, Andrew, Feezell, Daniel, Gunning, Brendan P., Sheehan, Christopher, Matias, Vladimir

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Reduction of reverse‐leakage current in selective‐area‐grown GaN‐based core–shell nanostructure LEDs using AlGaN layers von Rishinaramangalam, Ashwin K., Nami, Mohsen, Shima, Darryl M., Balakrishnan, Ganesh, Brueck, Steven R. J., Feezell, Daniel F.

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Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices von Rishinaramangalam, Ashwin K., Ul Masabih, Saadat Mishkat, Fairchild, Michael N., Wright, Jeremy B., Shima, Darryl M., Balakrishnan, Ganesh, Brener, Igal, Brueck, S.R.J., Feezell, Daniel F.

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Field emission scanning probe lithography with GaN nanowires on active cantilevers von Behzadirad, Mahmoud, Rishinaramangalam, Ashwin K., Feezell, Daniel, Busani, Tito, Reuter, Christoph, Reum, Alexander, Holz, Mathias, Gotszalk, Teodor, Mechold, Stephan, Hofmann, Martin, Ahmad, Ahmad, Ivanov, Tzvetan, Rangelow, Ivo W.

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Experimental study of field emission from ultrasharp silicon, diamond, GaN, and tungsten tips in close proximity to the counter electrode von Lenk, Claudia, Lenk, Steve, Holz, Mathias, Guliyev, Elshad, Hofmann, Martin, Ivanov, Tzvetan, Rangelow, Ivo W., Behzadirad, Mahmoud, Rishinaramangalam, Ashwin K., Feezell, Daniel, Busani, Tito

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Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire von Rishinaramangalam, Ashwin K., Nami, Mohsen, Fairchild, Michael N., Shima, Darryl M., Balakrishnan, Ganesh, Brueck, S. R. J., Feezell, Daniel F.

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Three-dimensional GaN templates for molecular beam epitaxy of nonpolar InGaN/GaN coaxial light-emitting diodes von Rishinaramangalam, Ashwin K., Fairchild, Michael N., Hersee, Stephen D., Balakrishnan, Ganesh, Feezell, Daniel F.

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Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography von Lenk, Claudia, Hofmann, Martin, Ivanov, Tzvetan, Ahmad, Ahmad, Lenk, Steve, Rangelow, Ivo W., Reum, Alexander, Reuter, Christoph, Holz, Mathias, Behzadirad, Mahmoud, Rishinaramangalam, Ashwin K., Feezell, Daniel, Busani, Tito

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GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition von Tarief Elshafiey, Abdelrahman, DaVico, Kenneth M., Rishinaramangalam, Ashwin K., Rashidi, Arman, Aragon, Andrew, Feezell, Daniel, Gunning, Brendan P., Sheehan, Christopher, Matias, Vladimir

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