Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes von Rashidi, A., Nami, M., Monavarian, M., Aragon, A., DaVico, K., Ayoub, F., Mishkat-Ul-Masabih, S., Rishinaramangalam, A., Feezell, D.

Volltext

Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes von Monavarian, M., Rashidi, A., Aragon, A. A., Oh, S. H., Rishinaramangalam, A. K., DenBaars, S. P., Feezell, D.

Volltext

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures von Sanford, N. A, Blanchard, P. T, Brubaker, M. D, Rishinaramangalam, A. K, Zhang, Q, Roshko, A, Feezell, D. F, Klein, B. D. B, Davydov, A. V

Volltext bestellen

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures von Sanford, N A, Blanchard, P T, Brubaker, M D, Rishinaramangalam, A K, Zhang, Q, Roshko, A, Feezell, D F, Klein, B D B, Davydov, A V

Volltext

Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes von Nami, Mohsen, Stricklin, Isaac E., DaVico, Kenneth M., Mishkat-Ul-Masabih, Saadat, Rishinaramangalam, Ashwin K., Brueck, S. R. J., Brener, Igal, Feezell, Daniel F.

Volltext

Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN von Mishkat-Ul-Masabih, Saadat, Luk, Ting Shan, Rishinaramangalam, Ashwin, Monavarian, Morteza, Nami, Mohsen, Feezell, Daniel

Volltext

Threading defect elimination in GaN nanowires von Hersee, Stephen D., Rishinaramangalam, Ashwin K., Fairchild, Michael N., Zhang, Lei, Varangis, Petros

Volltext

Nonpolar -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth von Rashidi, Arman, Monavarian, Morteza, Aragon, Andrew, Rishinaramangalam, Ashwin, Feezell, Daniel

Volltext

Internal quantum efficiency and carrier dynamics in semipolar (20 21 ) InGaN/GaN light-emitting diodes von Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K, Oh, Sang H, DenBaars, Steve P, Liu, Sheng, Brener, Igal, Feezell, Daniel F

Volltext

High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication von Rashidi, Arman, Monavarian, Morteza, Aragon, Andrew, Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin, Mishkat-Ul-Masabih, Saadat, Feezell, Daniel

Volltext

Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy von Nami, Mohsen, Eller, Rhett F, Okur, Serdal, Rishinaramangalam, Ashwin K, Liu, Sheng, Brener, Igal, Feezell, Daniel F

Volltext

Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy von Ranga, Praneeth, Rishinaramangalam, Ashwin, Varley, Joel, Bhattacharyya, Arkka, Feezell, Daniel, Krishnamoorthy, Sriram

Volltext

Advanced Scanning Probe Nanolithography Using GaN Nanowires von Behzadirad, Mahmoud, Mecholdt, Stephan, Randall, John N, Ballard, Joshua B, Owen, James, Rishinaramangalam, Ashwin K, Reum, Alexander, Gotszalk, Teodor, Feezell, Daniel F, Rangelow, Ivo W, Busani, Tito

Volltext

Electrically Injected GHz-Class GaN/InGaN Core–Shell Nanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity von Nami, Mohsen, Rashidi, Arman, Monavarian, Morteza, Mishkat-Ul-Masabih, Saadat, Rishinaramangalam, Ashwin. K, Brueck, Steven R. J, Feezell, Daniel

Volltext

High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth von Rashidi, Arman, Rishinaramangalam, Ashwin K., Aragon, Andrew A., Mishkat-Ul-Masabih, Saadat, Monavarian, Morteza, Lee, Changmin, Denbaars, Steven P., Feezell, Daniel F.

Volltext

GaN/InGaN Blue Light‐Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam‐Assisted Deposition von Tarief Elshafiey, Abdelrahman, DaVico, Kenneth M., Rishinaramangalam, Ashwin K., Rashidi, Arman, Aragon, Andrew, Feezell, Daniel, Gunning, Brendan P., Sheehan, Christopher, Matias, Vladimir

Volltext

Reduction of reverse‐leakage current in selective‐area‐grown GaN‐based core–shell nanostructure LEDs using AlGaN layers von Rishinaramangalam, Ashwin K., Nami, Mohsen, Shima, Darryl M., Balakrishnan, Ganesh, Brueck, Steven R. J., Feezell, Daniel F.

Volltext

Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices von Rishinaramangalam, Ashwin K., Ul Masabih, Saadat Mishkat, Fairchild, Michael N., Wright, Jeremy B., Shima, Darryl M., Balakrishnan, Ganesh, Brener, Igal, Brueck, S.R.J., Feezell, Daniel F.

Volltext

Field emission scanning probe lithography with GaN nanowires on active cantilevers von Behzadirad, Mahmoud, Rishinaramangalam, Ashwin K., Feezell, Daniel, Busani, Tito, Reuter, Christoph, Reum, Alexander, Holz, Mathias, Gotszalk, Teodor, Mechold, Stephan, Hofmann, Martin, Ahmad, Ahmad, Ivanov, Tzvetan, Rangelow, Ivo W.

Volltext

Delta-doped β -Ga 2 O 3 thin films and β -(Al 0.26 Ga 0.74 ) 2 O 3 / β -Ga 2 O 3 heterostructures grown by metalorganic vapor-phase epitaxy von Ranga, Praneeth, Bhattacharyya, Arkka, Rishinaramangalam, Ashwin, Ooi, Yu Kee, Scarpulla, Michael A., Feezell, Daniel, Krishnamoorthy, Sriram

Volltext