Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications von Rinaldi, Niccolò, Schroter, Michael

Volltext

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs von d'Alessandro, Vincenzo, Sasso, Grazia, Rinaldi, Niccolo, Aufinger, Klaus

Volltext

3-D thermal models calibration by parametric dynamic compact thermal models von Codecasa, Lorenzo, d'Alessandro, Vincenzo, Magnani, Alessandro, Rinaldi, Niccolò

Volltext

Advanced thermal simulation of SiGe:C HBTs including back-end-of-line von d'Alessandro, Vincenzo, Magnani, Alessandro, Codecasa, Lorenzo, Rinaldi, Niccolò, Aufinger, Klaus

Volltext

A Deterministic and Self-Consistent Solver for the Coupled Carrier-Phonon System in SiGe HBTs von Kamrani, Hamed, Jabs, Dominic, d'Alessandro, Vincenzo, Rinaldi, Niccolò, Aufinger, Klaus, Jungemann, Christoph

Volltext

Versatile MOR-based boundary condition independent compact thermal models with multiple heat sources von Codecasa, Lorenzo, Bornoff, Robin, Dyson, James, d’Alessandro, Vincenzo, Magnani, Alessandro, Rinaldi, Niccolò

Volltext

Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies von d'Alessandro, Vincenzo, Catalano, Antonio Pio, Magnani, Alessandro, Codecasa, Lorenzo, Rinaldi, Niccolò, Moser, Brian, Zampardi, Peter J.

Volltext

Multi-port dynamic compact thermal models of dual-chip package using model order reduction and metaheuristic optimization von Rogié, Brice, Codecasa, Lorenzo, Monier-Vinard, Eric, Bissuel, Valentin, Laraqi, Najib, Daniel, Olivier, D'Amore, Dario, Magnani, Alessandro, d'Alessandro, Vincenzo, Rinaldi, Niccolò

Volltext

Partition-based approach to parametric dynamic compact thermal modeling von Codecasa, Lorenzo, d’Alessandro, Vincenzo, Magnani, Alessandro, Rinaldi, Niccolò, Metzger, Andre G., Bornoff, Robin, Parry, John

Volltext

Analysis of the thermal behavior of AlGaN/GaN HEMTs von Russo, Salvatore, d’Alessandro, Vincenzo, Costagliola, Maurizio, Sasso, Grazia, Rinaldi, Niccolò

Volltext

Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations von d’Alessandro, Vincenzo, Magnani, Alessandro, Riccio, Michele, Iwahashi, Yohei, Breglio, Giovanni, Rinaldi, Niccolò, Irace, Andrea

Volltext

Analysis of Electrothermal Effects in Bipolar Differential Pairs von d'Alessandro, Vincenzo, La Spina, Luigi, Nanver, Lis K, Rinaldi, Niccolò

Volltext

Theory of electrothermal behavior of bipolar transistors: part III-impact ionization von Rinaldi, N., d'Alessandro, V.

Volltext

Theory of electrothermal behavior of bipolar transistors: Part I -single-finger devices von Rinaldi, N., d'Alessandro, V.

Volltext

Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications von Sasso, Grazia, d’Alessandro, Vincenzo, Costagliola, Maurizio, Russo, Salvatore, Rinaldi, Niccolò

Volltext

Sanzioni, Russia, Asia centrale e antiche carovane von Rinaldi, Niccolò

Volltext

Influence of Concurrent Electrothermal and Avalanche Effects on the Safe Operating Area of Multifinger Bipolar Transistors von La Spina, L., d'Alessandro, V., Russo, S., Rinaldi, N., Nanver, L.K.

Volltext

Analysis of the Bipolar Current Mirror Including Electrothermal and Avalanche Effects von Rinaldi, N., d'Alessandro, V., Nanver, L.K.

Volltext

Physical and Electrical Performance Limits of High-Speed Si GeC HBTs-Part II: Lateral Scaling von Schroter, M., Krause, J., Rinaldi, N., Wedel, G., Heinemann, B., Chevalier, P., Chantre, A.

Volltext

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications von Chevalier, Pascal, Jungemann, C., Lovblom, Rickard, Maneux, Cristell, Ostinelli, Olivier, Pawlak, Andreas, Rinaldi, Niccolo, Rucker, Holger, Wedel, Gerald, Zimmer, Thomas, Schroter, Michael, Bolognesi, Colombo R., d'Alessandro, Vincenzo, Alexandrova, Maria, Bock, Josef, Flickiger, Ralf, Fregonese, Sebastien, Heinemann, Bernd

Volltext