Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy von Baeumler, Martina, Gütle, Frank, Polyakov, Vladimir, Cäsar, Markus, Dammann, Michael, Konstanzer, Helmer, Pletschen, Wilfried, Bronner, Wolfgang, Quay, Rüdiger, Waltereit, Patrick, Mikulla, Michael, Ambacher, Oliver, Bourgeois, Franck, Behtash, Reza, Riepe, Klaus J., van der Wel, Paul J., Klappe, Jos, Rödle, Thomas

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Investigation of Leakage Current of AIGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy von BAEUMLER, Martina, GÜTLE, Frank, MIKULLA, Michael, AMBACHER, Oliver, BOURGEOIS, Franck, BEHTASH, Reza, RIEPE, Klaus J, VAN DER WEL, Paul J, KLAPPE, Jos, RÖDLE, Thomas, POLYAKOV, Vladimir, CÄSAR, Markus, DAMMANN, Michael, KONSTANZER, Helmer, PLETSCHEN, Wilfried, BRONNER, Wolfgang, QUAY, Rüdiger, WALTEREIT, Patrick

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Method for producing microelectronic component and component produced according to said method von WOLFGANG DOSER, HERV BLANCK, KLAUS J. RIEPE

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Method for producing microelectronic component and component produced according to said method von WOLFGANG DOSER, HERV BLANCK, KLAUS J. RIEPE

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METHOD FOR PRODUCING A MICROELECTRONIC COMPONENT AND COMPONENT PRODUCED ACCORDING TO SAID METHOD von RIEPE, KLAUS, J, BLANCK, HERVE, DOSER, WOLFGANG

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METHOD FOR PRODUCING A MICROELECTRONIC COMPONENT AND COMPONENT PRODUCED ACCORDING TO SAID METHOD von RIEPE, KLAUS, J, BLANCK, HERVE, DOSER, WOLFGANG

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METHOD FOR PRODUCING A MICROELECTRONIC COMPONENT AND COMPONENT PRODUCED ACCORDING TO SAID METHOD von RIEPE, KLAUS, J, BLANCK, HERVE, DOSER, WOLFGANG

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Verfahren zur Herstellung eines mikroelektronischen Bauelements von BLANCK, HERVE, RIEPE, KLAUS J, DOSER, WOLFGANG

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Theœ impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs

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Breakdown mechanisms in pseudomorphic InAlAs/InxGa1-xAs high electron mobility transistors on InP. I: Off-state von DICKMANN, J, SCHILDBERG, S, RIEPE, K, MAILE, B. E, SCHURR, A, GEYER, A, NAROZNY, P

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Breakdown mechanisms in pseudomorphic InAlAs/InxGa1-xAs high electron mobility transistors on InP. II: On-state von DICKMANN, J, SCHILDBERG, S, RIEPE, K, MAILE, B. E, SCHURR, A, GEYER, A, NAROZNY, P

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In0.52Al0.48As/InxGa1-xAs (0.53<x<1.0) pseudomorphic high electron mobility transistors with high breakdown voltages : design and performances von DICKMANN, J, RIEPE, K, GEYER, A, MAILE, B. E, SCHURR, A, BERG, M, DAEMBKES, H

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