Microscopic scale characterization and modeling of transistor degradation under HC stress von Mamy Randriamihaja, Yoann, Huard, V., Federspiel, X., Zaka, A., Palestri, P., Rideau, D., Roy, D., Bravaix, A.

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Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high- κ /SiO2 gate stacks von Niquet, Y. M., Duchemin, I., Nguyen, V.-H., Triozon, F., Rideau, D.

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Reliable gate stack and substrate parameter extraction based on C-V measurements for 14nm node FDSOI technology von Mohamad, B., Leroux, C., Rideau, D., Haond, M., Reimbold, G., Ghibaudo, G.

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Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys von Michaillat, M., Rideau, D., Aniel, F., Tavernier, C., Jaouen, H.

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Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs von Ghetti, A., Carnevale, G., Rideau, D.

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Unexpected impact of germanium content in SiGe bulk PMOSFETs von Diouf, C., Cros, A., Soussou, A., Rideau, D., Haendler, S., Rosa, J., Ghibaudo, G.

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On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs von Rideau, D., Feraille, M., Michaillat, M., Niquet, Y.M., Tavernier, C., Jaouen, H.

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SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time von Ramirez-Garcia, E., Michaillat, M., Aniel, F., Zerounian, N., Enciso-Aguilar, M., Rideau, D.

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Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys von Niquet, Y. M., Rideau, D., Tavernier, C., Jaouen, H., Blase, X.

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Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility von Nier, O., Rideau, D., Niquet, Y. M., Monsieur, F., Nguyen, V. H., Triozon, F., Cros, A., Clerc, R., Barbé, J. C., Palestri, P., Esseni, D., Duchemin, I., Smith, L., Silvestri, L., Nallet, F., Tavernier, C., Jaouen, H., Selmi, L.

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Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects von Zaka, A., Singer, J., Dornel, E., Garetto, D., Rideau, D., Rafhay, Q., Clerc, R., Manceau, J.-P., Degors, N., Boccaccio, C., Tavernier, C., Jaouen, H.

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Imbalance between platelet vascular endothelial growth factor and platelet-derived growth factor in pulmonary hypertension : Effect of prostacyclin therapy von EDDAHIBI, Saadia, HUMBERT, Marc, ADNOT, Serge, SEDIAME, Said, CHOUAID, Christos, PARTOVIAN, Chohreh, MAITRE, Bernard, TEIGER, Emmanuel, RIDEAU, Dominique, SIMONNEAU, Gerald, SITBON, Olivier

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Shortened Telomeres in Circulating Leukocytes of Patients with Chronic Obstructive Pulmonary Disease von Savale, Laurent, Chaouat, Ari, Bastuji-Garin, Sylvie, Marcos, Elisabeth, Boyer, Laurent, Maitre, Bernard, Sarni, Mourad, Housset, Bruno, Weitzenblum, Emmanuel, Matrat, Mireille, Le Corvoisier, Philippe, Rideau, Dominique, Boczkowski, Jorge, Dubois-Rande, Jean-Luc, Chouaid, Christos, Adnot, Serge

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Monte Carlo simulation of high-energy transport of electrons and holes in bulk SiGeC alloys von Michaillat, M, Rideau, D, Aniel, F, Tavernier, C, Jaouen, H

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Motional ordering of a charge-density wave in the sliding state von Danneau, R, Ayari, A, Rideau, D, Requardt, H, Lorenzo, J E, Ortega, L, Monceau, P, Currat, R, Grübel, G

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Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation von Dollfus, P., Saint-Martin, J., Cazimajou, T., Helleboid, R., Pilotto, A., Rideau, D., Bournel, A., Pala, M.

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Serotonin transporter inhibition prevents and reverses monocrotaline-induced pulmonary hypertension in rats von GUIGNABERT, Christophe, RAFFESTIN, Bernadette, BENFERHAT, Rima, RAOUL, William, ZADIGUE, Patricia, RIDEAU, Dominique, HAMON, Michel, ADNOT, Serge, EDDAHIBI, Saadia

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Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework von Julliard, P.L., Johnsson, A., Zographos, N., Demoulin, R., Monflier, R., Jay, A., Er-Riyahi, O., Monsieur, F., Joblot, S., Deprat, F., Rideau, D., Pichler, P., Hémeryck, A., Cristiano, F.

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Multiple microscopic defects characterization methods to improve macroscopic degradation modeling of MOSFETs von Randriamihaja, Y M, Bravaix, A, Huard, V, Rideau, D, Rafik, M, Roy, D

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X-ray scattering evidence for macroscopic strong pinning centers in the sliding CDW state of NbSe3 von Rideau, D, Monceau, P, Currat, R, Requardt, H, Nad, F, Lorenzo, J. E, Brazovskii, S, Detlefs, C, Grübel, G

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