Optimization of SiGe HBTs for operation at high current densities von Joseph, A.J., Cressler, J.D., Richey, D.M., Niu, G.

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Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's von Richey, D.M., Cressler, J.D., Joseph, A.J.

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Base-profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBT's von Ansley, W.E., Cressler, J.D., Richey, D.M.

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Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime von Joseph, A.J., Cressler, J.D., Richey, D.M.

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Novel collector current phenomenon in advanced bipolar transistors operated at deep cryogenic temperatures von Joseph, A.J., Cressler, J.D., Richey, D.M.

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Evidence for nonequilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures von Richey, D.M., Joseph, A.J., Cressler, J.D., Jaeger, R.C.

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