Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces von Takeuchi, D., Kato, H., Ri, G. S., Yamada, T., Vinod, P. R., Hwang, D., Nebel, C. E., Okushi, H., Yamasaki, S.

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Recovery of negative electron affinity by annealing on (111) oxidized diamond surfaces von Takeuchi, D., Ri, S.-G., Tokuda, N., Yamasaki, S.

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Electron emission suppression from hydrogen-terminated n-type diamond von Takeuchi, D., Ogura, M., Ri, S.-G., Kato, H., Okushi, H., Yamasaki, S.

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Negative electron affinity on hydrogen terminated diamond von Takeuchi, D., Ri, S.-G., Kato, H., Nebel, C. E., Yamasaki, S.

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Secondary photoelectron emission experiments on p-, intrinsic, and n-type diamond von Takeuchi, D., Ri, S.-G., Kato, H., Nebel, C.E., Yamasaki, S.

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p-type doping by B ion implantation into diamond at elevated temperatures von Tsubouchi, Nobuteru, Ogura, M., Kato, H., Ri, S.G., Watanabe, H., Horino, Y., Okushi, H.

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Effect of laser irradiation during B ion implantation into diamond von Tsubouchi, Nobuteru, Ogura, M., Kato, H., Ri, S.G., Watanabe, H., Horino, Y., Okushi, H.

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Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques von Yuan, X. L., Sekiguchi, T., Ri, S. G., Ito, S.

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Visibility of misfit dislocations at the interface of strained Si/Si0.8Ge0.2 by EBIC von Yuan, X. L., Chen, J., Ri, S. G., Ito, S., Sekiguchi, T.

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Visibility of misfit dislocations at the interface of strained Si/Si 0.8 Ge 0.2 by EBIC von Yuan, X. L., Chen, J., Ri, S. G., Ito, S., Sekiguchi, T.

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Study of dislocations in strained-Si/SiO.8Ge0.2 heterostructures by EBIC, TEM and etching techniques von Yuan, X L, Sekiguchi, T, Ri, S G, Ito, S

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Study of dislocations in strained-Si/Si 0.8 Ge 0.2 heterostructures by EBIC, TEM and etching techniques von Yuan, X. L., Sekiguchi, T., Ri, S. G., Ito, S.

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Surface conductive layers on oxidized (111) diamonds von Ri, Sung-Gi, Takeuchi, Daisuke, Kato, Hiromitsu, Ogura, Masahiko, Makino, Toshiharu, Yamasaki, Satoshi, Okushi, Hideyo, Rezek, Bohuslav, Nebel, Christoph E.

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Visibility of misfit dislocations at the interface of strained Si/SiO.8Ge0.2 by EBIC von Yuan, X L, Chen, J, Ri, S G, Ito, S, Sekiguchi, T

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Electrical characterization of homoepitaxial diamond p–n + junction von Makino, Toshiharu, Kato, Hiromitsu, Ri, Sung-Gi, Chen, Yigang, Okushi, Hideyo

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Muon spin relaxation in CVD polycrystalline diamond film von Ri, Sung-Gi, Watanabe, Hideyuki, Ogura, Masahiko, Takeuchi, Daisuke, Hasegawa, Masataka, Okushi, Hideyo, Shimomura, Koichiro, Nishiyama, Kusuo

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Fabrication of Nitrogen-Doped Diamond Field Emitter Utilizing Porous Silicon and Molding Technique von Takayuki Takida, Takayuki Takida, Kouji Inoue, Kouji Inoue, Sung-Gi Ri, Sung-Gi Ri, Hideki Kimura, Hideki Kimura, Hideo Kiyota, Hideo Kiyota, Ichiro Saito, Ichiro Saito, Tateki Kurosu, Tateki Kurosu, Masamori Iida, Masamori Iida

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Electrical properties of Al2O3 - CeO2 combinatorial thin films deposited by magnetron sputtering von Konishi, Junya, Ohsawa, Takashi, Tanaka, Akihiro, Makiishi, Takumi, Suzuki, Setsu, Ishibashi, Keiji, Ri, S.-G, Tkahashi, Kenichiro, Yamamoto, Yasuhiro

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Structural properties of sulfur-implanted diamond single crystals von Hasegawa, M., Ogura, M., Takeuchi, D., Yamanaka, S., Watanabe, H., Sung-Gi Ri, Kobayashi, N., Okushi, H.

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スパッタ法により形成したAl2O3添加CeO2薄膜の電気特性評価 von 小西, 順也, 大澤, 隆志, 田中, 章裕, 牧石, 拓巳, 鈴木, 摂, 石橋, 啓次, 李, 成奇, 高橋, 健一郎, 山本, 康博

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