Characterization of Quantum-Cascade Lasers Using Single-Pass Transmission Spectroscopy von Dirisu, A.O., Revin, D.G., Zhijun Liu, Kennedy, K., Cockburn, J.W., Gmachl, C.F.

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A GaInAs/AlInAs quantum cascade laser with an emission wavelength of 5.6 μm von Zasavitskii, I.I., Kovbasa, N.Yu, Raspopov, N.A., Lobintsov, A.V., Kurnyavko, Yu.V., Gorlachuk, P.V., Krysa, A.B., Revin, D.G.

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Low threshold room temperature GaAs/AlGaAs quantum cascade laser with InAlP waveguide von Atkins, C.N., Krysa, A.B., Revin, D.G., Kennedy, K., Commin, J.P., Cockburn, J.W.

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High temperature λ~4 µm In 0.7 Ga 0.3 As/In 0.34 Al 0.66 As quantum cascade lasers grown by MOVPE von Revin, D.G., Kennedy, K., Commin, J.P., Qiu, Y., Walther, T., Cockburn, J.W., Krysa, A.B.

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Visible-light optical coherence tomography platform for the characterization of the skin barrier von Revin, D.G, Byers, R.A, Duan, M.Q, Li, W, Matcher, S.J

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Room temperature λ ~ 3.3 μm InP-based InGaAs/AlAs(Sb) quantum cascade lasers von ZHANG, S. Y, REVIN, D. G, COMMIN, J. P, KENNEDY, K, KRYSA, A. B, COCKBURN, J. W

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Relaxation and dephasing of the intersubband transitions in n-type InAs∕AlSb multi quantum wells von Menzel, S., Zibik, E. A., Revin, D. G., Cockburn, J. W., Devenson, J., Teissier, R., Baranov, A. N.

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Single grating period quantum cascade laser array with broad wavelength tuning range von KENNEDY, K, REVIN, D. G, COMMIN, J. P, KRYSA, A. B, SEMTSIV, M. P, CHASHNIKOVA, M, MASSELINK, W. T, COCKBUM, J. W, HOGG, R. A

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Measurements of optical losses in mid-infrared semiconductor lasers using Fabry–Pérot transmission oscillations von Revin, D. G., Wilson, L. R., Carder, D. A., Cockburn, J. W., Steer, M. J., Hopkinson, M., Airey, R., Garcia, M., Sirtori, C., Rouillard, Y., Barate, D., Vicet, A.

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Pulsed operation of long-wavelength (λ ~ 11,3 μm) MOVPE-grown quantum cascade lasers up to 350 K von MOREAU, V, KRYSA, A. B, BAHRIZ, M, WILSON, L. R, COLOMBELLI, R, REVIN, D. G, JULIEN, F, COCKBUM, J. W, ROBERTS, J. S

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InGaAs-AlAsSb quantum cascade structures emitting at 3.1 µm von Revin, D.G., Steer, M.J., Wilson, L.R., Airey, R.J., Cockburn, J.W., Zibik, E.A., Green, R.P.

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The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions von Tetelbaum, D.I., Trushin, S.A., Burdov, V.A., Golovanov, A.I., Revin, D.G., Gaponova, D.M.

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Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3 - 4 µm range von Revin, D.G., Zhang, S.Y., Commin, J.P., Cockburn, J.W., Kennedy, K., Krysa, A.B., Hopkinson, M.

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Active mode locking of quantum cascade lasers operating in external ring cavity von Revin, D.G, Hemingway, M, Wang, Y, Cockburn, J.W, Belyanin, A

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The optimization of photoluminescence properties of ion-implantation-produced nanostructures on the basis of Si inclusions in a SiO 2 matrix von Trushin, S.A, Mikhaylov, A.N, Tetelbaum, D.I, Gorshkov, O.N, Revin, D.G, Gaponova, D.M

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The optimization of photoluminescence properties of ion-implantation-produced nanostructures on the basis of Si inclusions in a SiO2 matrix von Trushin, S.A, Mikhaylov, A.N, Tetelbaum, D.I, Gorshkov, O.N, Revin, D.G, Gaponova, D.M

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Short wavelength distributed feedback quantum cascade laser von Slight, T.J., Tandoi, G., Ironside, C.N., McKee, A., Langton, C., Eddie, I., Revin, D.G., Steer, M.J., Zhang, S.Y., Cockburn, J.W., Passaro, V.M.N., De Leonardis, F.

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Narrowing of Photoluminescence Line from Single Quantum Well under High Excitation Levels von Aleshkin, V.Ya, Revin, D.G.

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The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO 2 with Si nanoinclusions von Tetelbaum, D.I., Trushin, S.A., Burdov, V.A., Golovanov, A.I., Revin, D.G., Gaponova, D.M.

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Continuous wave room temperature external ring cavity quantum cascade laser von Revin, D.G, Hemingway, M, Vaitiekus, D, Cockburn, J.W, Hempler, N, Maker, G.T, Malcolm, G.P.A

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