Surface phonons and alloying effects in (CdS) x( CdSe) 1− x nanospheres von Mlayah, A., Brugman, A.M., Carles, R., Renucci, J.B., Valakh, M.Ya, Pogorelov, A.V.

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Characterization of implantation and annealing of Zn-implanted InP by Raman spectrometry von BEDEL, E, LANDA, G, CARLES, R, RENUCCI, J. B, ROQUAIS, J. M, FAVENNEC, P. N

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Raman determination of the composition in semiconductor ternary solid solutions von SAINT-CRICQ, N, LANDA, G, RENUCCI, J. B, HARDY, I, MUNOZ-YAGUE, A

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Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2 von LANDA, G, CARLES, R, RENUCCI, J. B, FONTAINE, C, BEDEL, E, MUNOZ-YAGUE, A

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A new experimental method for the determination of the one phonon density of states in GaAs von Carles, R., Zwick, A., Renucci, M.A., Renucci, J.B.

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Bond relaxation phenomenon and impurity modes frequencies in III–V compounds von Carles, R., Landa, G., Renucci, J.B.

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Hydrostatic Pressure Dependence of First-Order Raman Frequencies in Se and Te von Richter, W., Renucci, J. B., Cardona, M.

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Resonant Raman Scattering in Ga1-xInxP Solid Solutions von Bedel, E., Carles, R., Zwick, A., Renucci, M. A., Renucci, J. B.

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Raman studies of non-stoichiometric amorphous GaSb films von Carles, R., Renucci, J. B., Gheorghi, A., Theye, M.-L.

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Raman investigation of the InP lattice dynamics von Bedel, E, Landa, G, Carles, R, Redoules, J P, Renucci, J B

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Raman scattering analysis of disorder in heterogeneous (GaAs) 1− x(SiC 2:H) x films grown by metal-organic chemical vapour deposition von Maury, F., Carles, R., Landa, G., Renucci, J.B.

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Selectivity of resonant Raman scattering in InAsxP1-x solid solutions von BEDEL, E, CARLES, R, ZWICK, A, RENUCCI, J. B, RENUCCI, M. A

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Second-order Raman scattering in InAs von Carles, R., Saint-Cricq, N., Renucci, J. B., Renucci, M. A., Zwick, A.

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Resonance Raman Scattering in InAs Near the E1 Edge von Carles, R, Saint-Cricq, N, Renucci, J B, Zwick, A, Renucci, M A

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Disorder activated Raman scattering in Ga1−xAlxAs alloys von Saint-Cricq, N., Carles, R., Renucci, J.B., Zwick, A., Renucci, M.A.

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Dynamical properties of Ga1−x InxAs solid solutions: Influence of local distortion effects von Landa, G., Carles, R., Renucci, J.B.

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Raman scattering in InP1-xAsx alloys von Carles, R, Saint-Cricq, N, Renucci, J B, Nicholas, R J

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Correlation between k = 0 optical phonons in NbS3 and phonons in ZrS3 von Zwick, A., Renucci, M.A., Carles, R., Saint-Cricq, N., Renucci, J.B.

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Effect of hydrostatic pressure on the second order Raman spectrum of GaP von Weinstein, B.A., Renucci, J.B., Cardona, M.

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Pressure dependence of the zone edge TA phonons in silicon von Richter, W., Renucci, J.B., Cardona, M.

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