Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field von Carneiro, Elodie, Rennesson, Stéphanie, Tamariz, Sebastian, Harrouche, Kathia, Semond, Fabrice, Medjdoub, Farid

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Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate von Altuntas, Philippe, Lecourt, Francois, Cutivet, Adrien, Defrance, Nicolas, Okada, Etienne, Lesecq, Marie, Rennesson, Stephanie, Agboton, Alain, Cordier, Yvon, Hoel, Virginie, De Jaeger, Jean-Claude

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Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate von Carneiro, Elodie, Rennesson, Stéphanie, Tamariz, Sebastian, Harrouche, Kathia, Semond, Fabrice, Medjdoub, Farid

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Impact of AlN/Si Nucleation Layers Grown Either by NH 3 ‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs von Yacoub, Hady, Zweipfennig, Thorsten, Kalisch, Holger, Vescan, Andrei, Dadgar, Armin, Wieneke, Matthias, Bläsing, Jürgen, Strittmatter, A., Rennesson, Stephanie, Semond, Fabrice

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Laser damage of free-standing nanometer membranes von Morimoto, Yuya, Roland, Iännis, Rennesson, Stéphanie, Semond, Fabrice, Boucaud, Philippe, Baum, Peter

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Blue Microlasers Integrated on a Photonic Platform on Silicon von Tabataba-Vakili, Farsane, Doyennette, Laetitia, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Frayssinet, Eric, Damilano, Benjamin, Duboz, Jean-Yves, Semond, Fabrice, Roland, Iannis, El Kurdi, Moustafa, Checoury, Xavier, Sauvage, Sébastien, Gayral, Bruno, Boucaud, Philippe

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Polarity in GaN and ZnO: Theory, measurement, growth, and devices von Zúñiga-Pérez, Jesús, Consonni, Vincent, Lymperakis, Liverios, Kong, Xiang, Trampert, Achim, Fernández-Garrido, Sergio, Brandt, Oliver, Renevier, Hubert, Keller, Stacia, Hestroffer, Karine, Wagner, Markus R., Reparaz, Juan Sebastián, Akyol, Fatih, Rajan, Siddharth, Rennesson, Stéphanie, Palacios, Tomás, Feuillet, Guy

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Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities von Tabataba-Vakili, Farsane, Roland, Iannis, Tran, Thi-Mo, Checoury, Xavier, El Kurdi, Moustafa, Sauvage, Sébastien, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe

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Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility von Bassaler, Julien, Mehta, Jash, Abid, Idriss, Konczewicz, Leszek, Juillaguet, Sandrine, Contreras, Sylvie, Rennesson, Stéphanie, Tamariz, Sebastian, Nemoz, Maud, Semond, Fabrice, Pernot, Julien, Medjdoub, Farid, Cordier, Yvon, Ferrandis, Philippe

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Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon von Tabataba-Vakili, Farsane, Doyennette, Laetitia, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Damilano, Benjamin, Frayssinet, Eric, Duboz, Jean-Yves, Checoury, Xavier, Sauvage, Sébastien, El Kurdi, Moustafa, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe

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Efficient second harmonic generation in low-loss planar GaN waveguides von Gromovyi, Maksym, Brault, Julien, Courville, Aimeric, Rennesson, Stéphanie, Semond, Fabrice, Feuillet, Guy, Baldi, Pascal, Boucaud, Philippe, Duboz, Jean-Yves, De Micheli, Marc P

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Optimization of / High Electron Mobility Heterostructures for High-Power/Frequency Performances von Rennesson, Stephanie, Lecourt, Francois, Defrance, Nicolas, Chmielowska, Magdalena, Chenot, Sebastien, Lesecq, Marie, Hoel, Virginie, Okada, Etienne, Cordier, Yvon, De Jaeger, Jean-Claude

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CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth von Portail, Marc, Frayssinet, Eric, Michon, Adrien, Rennesson, Stéphanie, Semond, Fabrice, Courville, Aimeric, Zielinski, Marcin, Comyn, Remi, Nguyen, Luan, Cordier, Yvon, Vennéguès, Philippe

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Complex optical index of single wall carbon nanotube films from the near-infrared to the terahertz spectral range von Maine, Sylvain, Koechlin, Charlie, Rennesson, Stéphanie, Jaeck, Julien, Salort, Simon, Chassagne, Bruno, Pardo, Fabrice, Pelouard, Jean-Luc, Haïdar, Riad

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Opto-electrical characterization of infrared sensors based on carbon nanotube films von Koechlin, Charlie, Maine, Sylvain, Rennesson, Stéphanie, Haidar, Riad, Trétout, Brigitte, Loiseau, Annick, Pelouard, Jean-Luc

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Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH 3 ‐MBE von Rennesson, Stephanie, Leroux, Mathieu, Al Khalfioui, Mohamed, Nemoz, Maud, Chenot, Sébastien, Massies, Jean, Largeau, Ludovic, Dogmus, Ezgi, Zegaoui, Malek, Medjdoub, Farid, Semond, Fabrice

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Universal description of III-V/Si epitaxial growth processes von Lucci, I., Charbonnier, S., Pedesseau, L., Vallet, M., Cerutti, L., Rodriguez, J.-B., Tournié, E., Bernard, R., Létoublon, A., Bertru, N., Le Corre, A., Rennesson, S., Semond, F., Patriarche, G., Largeau, L., Turban, P., Ponchet, A., Cornet, C.

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Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE von Rennesson, Stephanie, Leroux, Mathieu, Al Khalfioui, Mohamed, Nemoz, Maud, Chenot, Sébastien, Massies, Jean, Largeau, Ludovic, Dogmus, Ezgi, Zegaoui, Malek, Medjdoub, Farid, Semond, Fabrice

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Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances von Rennesson, S., Lecourt, F., Defrance, N., Chmielowska, M., Chenot, Sébastien, Lesecq, Marie, Hoel, Virginie, Okada, Etienne, Cordier, Y., de Jaeger, Jean-Claude

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Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs von Sánchez-Martín, H, García-Pérez, Ó, Pérez, S, Altuntas, P, Hoel, V, Rennesson, S, Cordier, Y, González, T, Mateos, J, Íñiguez-de-la-Torre, I

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