Ultra-low voltage control of magnetic properties in amorphous MgO von Guo, Jiajun, Wu, Liqian, Ren, Shuxia, Kang, Xin, Chen, Wei, Zhao, Xu

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An Improved Spectral Clustering Community Detection Algorithm Based on Probability Matrix von Ren, Shuxia, Wu, Tao, Zhang, Shubo

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Complex Network Filtering and Compression Algorithm Based on Triangle-Subgraph von Ren, Shuxia, Zhang, Shubo, Wu, Tao

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Research Progress of Photoelectric Resistive Switching Mechanism of Halide Perovskite von GUO, Huajun, AN, Shuailing, MENG, Jie, REN, Shuxia, WANG, Wenwen, LIANG, Zishang, SONG, Jiayu, CHEN, Hengbin, SU, Hang, ZHAO, Jinjin

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Effects of ZrB2 addition on texture development and properties of porous Si3N4-ZrB2 composites by magnetic field alignment von Yang, Zhigang, Zhao, Zhijia, Wang, Hao, Song, Huaqi, Yu, Jianbo, Ren, Zhongming, Ren, Shuxia, Ma, Shiqing, Wang, Zhi

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Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory von Liu, Xiaomin, Ren, Shuxia, Li, Zhenhua, Guo, Jiajun, Yi, Shenghui, Yang, Zheng, Hao, Weizhong, Li, Rui, Zhao, Jinjin

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Robust resistive switching in MoS2-based memristor with Ti top electrode von Liu, Lifu, Wang, Yuan, Chen, Wei, Ren, Shuxia, Guo, Jiajun, Kang, Xin, Zhao, Xu

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Oxygen migration induced effective magnetic and resistive switching boosted by graphene quantum dots von Ren, Shuxia, Li, Zhenhua, Liu, Xiaomin, Li, Yongsheng, Cao, Guozhong, Zhao, Jinjin

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NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment von Kang, Xin, Guo, Jiajun, Gao, Yingjie, Ren, Shuxia, Chen, Wei, Zhao, Xu

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Effect of nanohydroxyapatite on cadmium leaching and environmental risks under simulated acid rain von Zhao, Chenchen, Ren, Shuxia, Zuo, Qingqing, Wang, Shutao, Zhou, Yapeng, Liu, Wei, Liang, Shuxuan

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Unipolar resistive switching behavior in MoS2–polyvinyl alcohol-based memory device von Liu, Lifu, Cheng, Shijie, Chen, Wei, Ren, Shuxia, Kang, Xin, Zhao, Xu

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Unipolar resistive switching behavior in MoS 2 –polyvinyl alcohol-based memory device von Liu, Lifu, Cheng, Shijie, Chen, Wei, Ren, Shuxia, Kang, Xin, Zhao, Xu

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High-efficiency magnetic modulation in Ti/ZnO/Pt resistive random-access memory devices using amorphous zinc oxide film von Ren, Shuxia, Dong, Weichao, Tang, Hao, Tang, Lingzhi, Li, Zhenhua, Sun, Qiang, Yang, Huifang, Yang, Zhigang, Zhao, Jinjin

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Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory (Adv. Funct. Mater. 38/2022) von Liu, Xiaomin, Ren, Shuxia, Li, Zhenhua, Guo, Jiajun, Yi, Shenghui, Yang, Zheng, Hao, Weizhong, Li, Rui, Zhao, Jinjin

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Low-power, high-uniform, and forming-free resistive memory based on Mg-deficient amorphous MgO film with rough surface von Guo, Jiajun, Ren, Shuxia, Wu, Liqian, Kang, Xin, Chen, Wei, Zhao, Xu

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Robust mica perovskite photoelectric resistive switching memory von Zhang, Guanglei, Xu, Yanqing, Yang, Shuai, Ren, Shuxia, Jiao, Yinan, Wang, Ye, Ma, Xuena, Li, Hao, Hao, Weizhong, He, Caili, Liu, Xiaomin, Zhao, Jinjin

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Synthesis and Characterization of a Novel Alkaline Earth Metal Complex von Ren, Shu Xia, Yang, Hui Fang, Shen, Jun Jun, Li, Huang

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Resistive switching and magnetism in transparent a-TiOx films deposited by magnetron sputtering von Ren, Shuxia, Tang, Lingzhi, Sun, Qiang, Li, Zhenhua, Yang, Huifang, Chen, Wei

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Enhancement of electrically controlled ferromagnetism in metal-oxide films through magnetic transition metal doping von Ren, Shuxia, Chen, Wei, Guo, Jiajun, Yang, Huifang, Zhao, Xu

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Quantum conductance and magnetic properties in ZnO based resistive switching memory von Ren, Shuxia, Guo, Jiajun, Zhang, Li, Zhao, Xu, Chen, Wei

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