Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs von Remesh, Nayana, Mohan, Nagaboopathy, Raghavan, Srinivasan, Muralidharan, Rangarajan, Nath, Digbijoy N.

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Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications von Remesh, Nayana, Chandrasekar, Hareesh, Venugopalrao, Anirudh, Raghavan, Srinivasan, Rangarajan, Muralidharan, Nath, Digbijoy N.

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Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111) von Rathkanthiwar, Shashwat, Kalra, Anisha, Remesh, Nayana, Bardhan, Abheek, Muralidharan, Rangarajan, Nath, Digbijoy N., Raghavan, Srinivasan

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Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer von Dev, Sachin, Remesh, Nayana, Rawal, Yaksh, Manik, Prashanth Paramahans, Wood, Bingxi, Lodha, Saurabh

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An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition von Mohta, Neha, Rao, Ankit, Remesh, Nayana, Muralidharan, R, Nath, Digbijoy N

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An artificial synaptic transistor using an α-In2Se3 van der Waals ferroelectric channel for pattern recognition von Mohta, Neha, Rao, Ankit, Remesh, Nayana, Muralidharan, R., Nath, Digbijoy N.

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Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices von Subhani, Khawaja Nizammuddin, Remesh, Nayana, S, Niranjan, Raghavan, Srinivasan, R, Muralidharan, Nath, Digbijoy N., Bhat, K.N.

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Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model von Remesh, Nayana, Mohan, Nagaboopathy, Kumar, Sandeep, Prabhu, Shreesha, Guiney, Ivor, Humphreys, Colin J., Raghavan, Srinivasan, Muralidharan, Rangarajan, Nath, Digbijoy N.

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A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias von Remesh, Nayana, Kumar, Sandeep, Guiney, Ivor, Humphreys, Colin J., Raghavan, Srinivasan, Muralidharan, Rangarajan, Nath, Digbijoy N.

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Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200mm Si von Kumar, Sandeep, Remesh, Nayana, Dolmanan, S.B., Tripathy, S., Raghavan, S., Muralidharan, R., Nath, Digbijoy N.

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Interface traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 mm Si von Kumar, Sandeep, Remesh, Nayana, Dolmanan, S.B., Tripathy, S., Raghavan, S., Muralidharan, R., Nath, Digbijoy N.

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An artificial synaptic transistor using an α-InSe van der Waals ferroelectric channel for pattern recognition von Mohta, Neha, Rao, Ankit, Remesh, Nayana, Muralidharan, R, Nath, Digbijoy N

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Enabling Transfer of Ultrathin Layers of GaN for Demonstration of a Heterogenous Stack on Copper Heat Spreader von Nittala, Pavani Vamsi Krishna, Remesh, Nayana, S, Niranjan, Tasneem, Saba, Raghavan, Srinivasan, Muralidharan, Rangarajan, Nath, Digbijoy N., Sen, Prosenjit

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