Self-cooling in reverse biased p-InAsSbP/n-InAs0.9Sb0.1 heterostructures von Karandashev, S. A., Lavrov, A. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A.

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Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes von Dyakonova, N, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes von Dyakonova, N, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes von Dyakonova, N, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes von Dyakonova, N V, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb) von Zakgeim, A. L., Karandashev, S. A., Klimov, A. A., Kunkov, R. E., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A., Chernyakov, A. E.

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Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later) von Karandashev, S. A., Matveev, B. A., Remennyi, M. A.

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On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions von Karandashev, S. A., Klimov, A. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A.

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Long-wave infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates von Klimov, A A, Kunkov, R E, Lavrov, A A, Lebedeva, N M, Lukhmyrina, T C, Matveev, B A, Remennyi, M A

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On the Use of Indium Arsenide as the Waveguide Material in the Measurements by Attenuated Total Reflectance von Karandashev, S. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A.

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InAsSb Diode Optical Pairs for Real-Time Carbon Dioxide Sensors von Aleksandrov, S. E., Gavrilov, G. A., Kapralov, A. A., Matveev, B. A., Remennyi, M. A., Sotnikova, G. Yu

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Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure von Karandashev, S A, Klimov, A A, Kunkov, R E, Lavrov, A A, Lukhmyrina, T S, Matveev, B A, Remennyi, M A, Usikova, A A

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InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths von Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Usikova, A. A.

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Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs von Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A., Usikova, A.A.

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Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes von Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A.

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Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes von Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

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Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias von Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A.

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Current induced cooling in a metal/-InAs structure von Il'inskaya, N. D, Karandashev, S. A, Lukhmyrina, T. S, Matveev, B. A, Remennyi, M. A, Chernyakov, A. E

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Current induced cooling in a metal/ n -InAs structure von Il'inskaya, N. D., Karandashev, S. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Chernyakov, A. E.

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Room temperature mid-IR two-color photodiodes with InAs and InAs 0.9 Sb 0.1 absorbing layers von Klimov, A A, Kunkov, R E, Lukhmyrina, T S, Matveev, B A, Lebedeva, N M, Remennyi, M A

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