Enhanced capacitance ratio and low minimum capacitance of varactor devices based on depletion-mode Ga-doped ZnO TFTs with a drain-offset structure von Remashan, K, Choi, Y S, Park, S J, Jang, J H

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Impact of Hydrogenation of ZnO TFTs by Plasma-Deposited Silicon Nitride Gate Dielectric von Remashan, K., Dae-Kue Hwang, Seong-Ju Park, Jae-Hyung Jang

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ZnO-based thin film transistors having high refractive index silicon nitride gate von Remashan, K., Jang, J. H., Hwang, D. K., Park, S. J.

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Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination von Remashan, K., Huang, Wen-Pin, Chyi, Jen-Inn

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A compact analytical I– V model of AlGaAs/InGaAs/GaAs p-HEMTs based on non-linear charge control model von Remashan, K, Radhakrishnan, K

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Ring Oscillator Circuit Based on ZnO Thin Film Transistors Fabricated by RF Magnetron Sputtering von Jang, Jae-Hyung

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High Performance MOCVD-Grown ZnO Thin-Film Transistor with a Thin MgZnO Layer at Channel/Gate Insulator Interface von Remashan, K., Choi, Y. S., Park, S. J., Jang, J. H.

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Combined effect of (NH4)2Sx treatment and post-metallization annealing with plasma-enhanced chemical vapour deposition silicon nitride gate dielectric on the GaAs metal-insulator-s... von Remashan, K, Bhat, K N

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Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density von REMASHAN, K, BHAT, K. N

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Modeling inversion-layer carrier mobilities in all regions of MOSFET operation von Remashan, K, Wong, N.A, Chan, K, Sim, S.P, Yang, C.Y

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Enhanced Performance of MOCVD ZnO TFTs on Glass Substrates with Nitrogen-Rich Silicon Nitride Gate Dielectric von Remashan, K., Choi, Y. S., Park, S. J., Jang, J. H.

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Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples von Remashan, K, Chua, S J, Ramam, A, Prakash, S, Liu, W

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High Field-Effect Mobility Bottom-Gated Metallorganic Chemical Vapor Deposition ZnO Thin-Film Transistors with SiO[sub 2]∕Si[sub 3]N[sub 4] Bilayer Gate Dielectric von Remashan, K., Choi, Y. S., Park, S. J., Jang, J. H.

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Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH4)2Sx treatment and hydrogenation using plasma deposited silicon nitride gate insulator von Remashan, K, Bhat, K.N

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Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors von Remashan, K., Choi, Y. S., Park, S. J., Jang, J. H.

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Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH/sub 4/)/sub 2/S/sub x/ treatment and hydrogenation using plasma deposited silicon nitride gate insula... von Remashan, K., Bhat, K.N.

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ZnO-based thin film transistors having high refractive index siliconnitride gate von Remashan, K., Jang, J. H., Hwang, D. K., Park, S. J.

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Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH sub(4)) sub(2)S sub(x) treatment and hydrogenation using plasma deposited silicon nitride gate insula... von Remashan, K, Bhat, K N

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Stable gallium arsenide MIS capacitors and MIS field effecttransistors by (NH(4))(2)S(x) treatment andhydrogenation using plasma deposited silicon nitride gate insulator von Remashan, K, Bhat, K N

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Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH4)2S(x) treatment and hydrogenation using plasma deposited silicon nitride gate insulator von Remashan, K, Bhat, K N

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