SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor von Crippa, Danilo, Pistone, Giuseppe, Portuese, F., La Via, Francesco, Abbondanza, Giuseppe, Foti, Gaetano, Valente, Gian Luca, Reitano, Ricardo, Barbera, Milo, Mauceri, Marco, Abagnale, Giovanni, Leone, Stefano

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New Achievements on CVD Based Methods for SiC Epitaxial Growth von Giannazzo, G., Pistone, Giuseppe, Abbondanza, Giuseppe, Masi, Maurizio, Ruggiero, Alfonso, Di Franco, Salvatore, Mauceri, Marco, Zamolo, L., Roccaforte, Fabrizio, Crippa, Danilo, Neri, L., La Via, Francesco, Omarini, Fabrizio, Foti, Gaetano, Valente, Gian Luca, Reitano, Ricardo, Calcagno, Lucia, Abbagnale, G., Veneroni, Alessandro, Leone, Stefano

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Analogue modelling of basin inversion: a review and future perspectives von Zwaan, Frank, Schreurs, Guido, Buiter, S.J.H, Ferrer García, J. Oriol (José Oriol), Reitano, Ricardo, Rudolf, Michaael, Willingshofer, Ernst

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Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC von Baeri, P., Zimbone, M., Musumeci, Paolo, Reitano, Ricardo

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Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process von Pistone, Giuseppe, Abbondanza, Giuseppe, Di Franco, Salvatore, Ruggiero, Alfonso, Barbera, Milo, Mauceri, Marco, Roccaforte, Fabrizio, Firrincieli, A., Crippa, Danilo, Portuese, F., Galvagno, G., La Via, Francesco, Foti, Gaetano, Valente, Gian Luca, Reitano, Ricardo, Calcagno, Lucia, Abagnale, Giovanni, Leone, Stefano, Musumeci, Paolo

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Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers von La Via, Francesco, Libertino, Sebania, Reitano, Ricardo, Calcagno, Lucia, Ruggiero, Alfonso, Zimbone, M., Roccaforte, Fabrizio

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Defects in He+ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements von La Via, Francesco, Libertino, Sebania, Reitano, Ricardo, Calcagno, Lucia, Ruggiero, Alfonso, Mauceri, Marco, Roccaforte, Fabrizio, Musumeci, Paolo

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Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes von Pistone, Giuseppe, Abbondanza, Giuseppe, Di Franco, Salvatore, Ruggiero, Alfonso, Mauceri, Marco, Roccaforte, Fabrizio, Crippa, Danilo, La Via, Francesco, Neri, L., Foti, Gaetano, Valente, Gian Luca, Reitano, Ricardo, Calcagno, Lucia, Leone, Stefano

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The BINGO project: II. Instrument description von Wuensche, Carlos A., Villela, Thyrso, Abdalla, Elcio, Liccardo, Vincenzo, Vieira, Frederico, Browne, Ian, Peel, Michael W., Radcliffe, Christopher, Abdalla, Filipe B., Marins, Alessandro, Barosi, Luciano, Brito, Francisco A., Queiroz, Amilcar R., Wang, Bin, Costa, Andre A., Ferreira, Elisa G. M., Fornazier, Karin S.F., Landim, Ricardo G., Novaes, Camila P., Santos, Larissa, dos Santos, Marcelo V., Zhang, Jiajun, Chen, Tianyue, Delabrouille, Jacques, Dickinson, Clive, de Gasperis, Giancarlo, Gurjão, Edmar C., Harper, Stuart, Ma, Yin-Zhe, Machado, Telmo, Maffei, Bruno, de Mericia, Eduardo J., Monstein, Christian, Motta, Pablo, Otobone, Carlos H. N., Reitano, Luiz A., Remazeilles, Mathieu, Roychowdhury, Sambit, Santos, João R. L., Serres, Alexandre J. R., Souza, Andreia P., Strauss, Cesar, Vieira, Jordany, Xu, Haiguang

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The BINGO Project II: Instrument Description von Wuensche, Carlos A, Villela, Thyrso, Abdalla, Elcio, Liccardo, Vincenzo, Vieira, Frederico, Browne, Ian, Peel, Michael W, Radcliffe, Christopher, Abdalla, Filipe B, Marins, Alessandro, Barosi, Luciano, Brito, Francisco A, Queiroz, Amilcar R, Wang, Bin, Costa, Andre A, Ferreira, Elisa G M, nazier, Karin S F, Landim, Ricardo G, Novaes, Camila P, Santos, Larissa, dos Santos, Marcelo V, Zhang, Jiajun, Chen, Tianyue, Delabrouille, Jacques, Dickinson, Clive, de Gasperis, Giancarlo, Gurjão, Edmar C, Harper, Stuart, Yin-Zhe, Ma, Machado, Telmo, Maffei, Bruno, de Mericia, Eduardo J, Monstein, Christian, Motta, Pablo, Otobone, Carlos H N, Reitano, Luiz A, Remazeilles, Mathieu, Roychowdhury, Sambit, Santos, João R L, Serres, Alexandre J R, Souza, Andreia P, Strauss, Cesar, Vieira, Jordany, Xu, Haiguang

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