Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability von Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., Reisinger, H.

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On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices von Feil, M. W., Puschkarsky, K., Gustin, W., Reisinger, H., Grasser, T.

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An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps von Puschkarsky, K., Reisinger, H., Rott, G. A., Schlunder, Christian, Gustin, W., Grasser, T.

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Evaluation of daily environmental cleaning and disinfection practices in veterans affairs acute and long-term care facilities: A mixed methods study von McKinley, L., Goedken, C.C., Balkenende, E., Clore, G., Hockett, Sherlock S., Bartel, R., Bradley, S., Judd, J., Lyons, Goedken, Rock, C., Rubin, M., Shaughnessy, C., Reisinger, H.S., Perencevich, E., Safdar, N.

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NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling von Giering, K.-U., Puschkarsky, K., Reisinger, H., Rzepa, G., Rott, G., Vollertsen, R., Grasser, T., Jancke, R.

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The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability von Grasser, T, Reisinger, H, Wagner, P, Schanovsky, F, Goes, W, Kaczer, B

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Automated sonographic tubal patency evaluation with three‐dimensional coded contrast imaging (CCI) during hysterosalpingo‐contrast sonography (HyCoSy) von Exacoustos, C., Di Giovanni, A., Szabolcs, B., Binder‐Reisinger, H., Gabardi, C., Arduini, D.

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Searching for an Optimal Hand Hygiene Bundle: A Meta-analysis von Schweizer, Marin L., Reisinger, Heather Schacht, Ohl, Michael, Formanek, Michelle B., Blevins, Amy, Ward, Melissa A., Perencevich, Eli N.

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Origin of NBTI variability in deeply scaled pFETs von Kaczer, B, Grasser, T, Roussel, P J, Franco, J, Degraeve, R, Ragnarsson, L, Simoen, E, Groeseneken, G, Reisinger, H

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Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures von Bachhofer, H., Reisinger, H., Bertagnolli, E., von Philipsborn, H.

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Geochemical processes controlling arsenic mobility in groundwater: A case study of arsenic mobilization and natural attenuation von He, Y. Thomas, Fitzmaurice, Arthur G., Bilgin, Azra, Choi, Sunkyung, O’Day, Peggy, Horst, John, Harrington, James, James Reisinger, H., Burris, David R., Hering, Janet G.

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Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements von Reisinger, H., Blank, O., Heinrigs, W., Muhlhoff, A., Gustin, W., Schlunder, C.

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New insights on the PBTI phenomena in SiON pMOSFETs von Rott, K., Reisinger, H., Aresu, S., Schlünder, C., Kölpin, K., Gustin, W., Grasser, T.

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A model for multistep trap-assisted tunneling in thin high- k dielectrics von Blank, O., Reisinger, H., Stengl, R., Gutsche, M., Wiest, F., Capodieci, V., Schulze, J., Eisele, I.

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The 'permanent' component of NBTI: Composition and annealing von Grasser, T, Aichinger, T, Pobegen, G, Reisinger, H, Wagner, P, Franco, J, Nelhiebel, M, Kaczer, B

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Remediating Subsurface Arsenic Contamination with Monitored Natural Attenuation von Reisinger, H. James, Burris, David R, Hering, Janet G

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SrTiOx for sub-20nm DRAM technology nodes—Characterization and modeling von Kaczer, B., Larcher, L., Vandelli, L., Reisinger, H., Popovici, M., Clima, S., Ji, Z., Joshi, S., Swerts, J., Redolfi, A., Afanas’ev, V.V., Jurczak, M.

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The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps von Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Luque, María Toledano, Nelhiebel, M.

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Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy von Grasser, T., Rott, K., Reisinger, H., Wagner, P., Goes, W., Schanovsky, F., Waltl, M., Toledano-Luque, M., Kaczer, B.

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335 “4Ms” Conversation in the Emergency Department: A Qualitative Study von Sheber, M., McKnight, M., Liebzeit, D., Fick, D., Husser, E., Seaman, A., Reisinger, H., Lee, S.

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