Determination of silicon nitride film chemical composition to study hydrogen desorption mechanisms von Benoit, Daniel, Morin, Pierre, Regolini, Jorge

Volltext

Silicon-on-Nothing (SON)-an innovative process for advanced CMOS von Jurczak, M., Skotnicki, T., Paoli, M., Tormen, B., Martins, J., Regolini, J.L., Dutartre, D., Ribot, P., Lenoble, D., Pantel, R., Monfray, S.

Volltext

Development of embedded three-dimensional 35-nF/mm2 MIM capacitor and BiCMOS circuits characterization : Bipolar/bicmos circuits and technology meeting (BCTM) von GIRAUDIN, Jean-Christophe, BADETS, Franck, BLANC, Jean-Pierre, CHATAIGNER, Emmanuel, CHAPPAZ, Cédrick, REGOLINI, Jorge Luis, DELPECH, Philippe

Volltext

Development of Embedded Three-Dimensional 35-nF/mm ^ MIM Capacitor and BiCMOS Circuits Characterization von Giraudin, J.-G., Badets, F., Blanc, J.-P., Chataigner, E., Chappaz, C., Regolini, J.L., Delpech, P.

Volltext

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters von Jouan, S., Planche, R., Baudry, H., Ribot, P., Chroboczek, J.A., Dutartre, D., Gloria, D., Laurens, M., Llinares, P., Marty, M., Monroy, A., Morin, C., Pantel, R., Perrotin, A., de Pontcharro, J., Regolini, J.L., Vincent, G., Chantre, A.

Volltext

Extensive Study of the Correlation between Contact Etch Stop Nitride film Properties and Negative Bias Temperature Instabilities Measured in pMOSFETS von Benoit, Daniel, Morin, Pierre, Perrier, Frank, Chaton, Catherine, Charleux, Marion, Regolini, Jorge, Barla, Kathy, Ferreira, Paul

Volltext

Photodiode with interfacial charge control and associated process von REGOLINI JORGE, GROS-JEAN MICHAEL

Volltext bestellen

PHOTODIODE WITH INTERFACIAL CHARGE CONTROL BY IMPLANTATION AND ASSOCIATED PROCESS von REGOLINI JORGE, PINZELLI LUC

Volltext bestellen

PHOTODIODE WITH INTERFACIAL CHARGE CONTROL AND ASSOCIATED PROCESS von REGOLINI JORGE, GROS-JEAN MICHAEL

Volltext bestellen

Reduction of threshold voltage instabilities in a MOS transistor von Regolini, Jorge, Morin, Pierre, Benoit, Daniel

Volltext bestellen

Reduction of threshold voltage instabilities in a MOS transistor von REGOLINI JORGE, BENOIT DANIEL, MORIN PIERRE

Volltext bestellen

DISPOSITIF SEMI-CONDUCTEUR A TRANSISTORS MOS A COUCHE D'ARRET DE GRAVURE AYANT UN STRESS RESIDUEL AMELIORE ET PROCEDE DE FABRICATION D'UN TEL DISPOSITIF SEMI-CONDUCTEUR von REGOLINI JORGE, MORIN PIERRE

Volltext bestellen

Dielectric behavior of red HgI2 under direct bias von Regolini, Jorge L., Saura, José

Volltext

Photodiode with interface charge control and associated method von GROS-JEAN, MICHAEL, REGOLINI, JORGE

Volltext bestellen

Semiconductor device with MOS transistors with an etch-stop layer having an improved residual stress level and method for fabricating such a semiconductor device von Regolini, Jorge, Morin, Pierre

Volltext bestellen

Semiconductor device with MOS transistors with an engraving stop layer having two levels of residual stress adapted to the nature of the transistors von REGOLINI JORGE, MORIN PIERRE

Volltext bestellen

Study of Hydrogen Desorption from PECVD Silicon Nitride and Induced Defect Passivation von Benoit, Daniel, Morin, Pierre, Regolini, Jorge Luis

Volltext

Semiconductor device with MOS transistors with an etch-stop layer having an improved residual stress level and method for fabricating such a semiconductor device von REGOLINI JORGE LUIS, MORIN PIERRE

Volltext bestellen

Semiconductor device with MOS transistors with an etch-stop layer having an improved residual stress level and method for fabricating such a semiconductor device von Morin, Pierre, Regolini, Jorge Luis

Volltext bestellen

Method of selective deposition of refractory metal silicide on silicon von BENSAHEL, DANIEL, REGOLINI, JORGE

Volltext bestellen