Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs von Gnudi, A., Reggiani, S., Gnani, E., Baccarani, G.

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TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation von Balestra, L., Reggiani, S., Gnudi, A., Gnani, E., Dobrzynska, J., Vobecky, J.

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Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range von Balestra, L., Reggiani, S., Gnudi, A., Gnani, E., Dobrzynska, J., Vobecky, J.

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Tbr1 instructs laminar patterning of retinal ganglion cell dendrites von Liu, Jinyue, Reggiani, Jasmine D. S., Laboulaye, Mallory A., Pandey, Shristi, Chen, Bin, Rubenstein, John L. R., Krishnaswamy, Arjun, Sanes, Joshua R.

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Band-Structure Effects in Ultrascaled Silicon Nanowires von Gnani, E., Reggiani, S., Gnudi, A., Parruccini, P., Colle, R., Rudan, M., Baccarani, G.

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Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation von Lenzi, M., Palestri, P., Gnani, E., Reggiani, S., Gnudi, A., Esseni, D., Selmi, L., Baccarani, G.

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Effective Mobility in Nanowire FETs Under Quasi-Ballistic Conditions von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses von Reggiani, S.., Gnani, E.., Gnudi, A.., Rudan, M.., Baccarani, G..

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Detecting and Isolating Black-Hole Attacks in MANET Using Timer Based Baited Technique von Yasin, Adwan, Abu Zant, Mahmoud

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1517 Emergency department as place of end-of-life care and death in cancer patients von Pronzato, P, Casabona, F, Lambertini, M, Morganti, S, Reggiani, S, Zoli, D, Orengo, G

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A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects von Baccarani, G., Reggiani, S.

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Quasi-Ballistic Transport in Nanowire Field-Effect Transistors von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD = 0.4 V von MAIORANO, P, GNANI, E, GNUDI, A, REGGIANI, S, BACCARANI, G

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P.11.17: The Role of Adherence to Therapy on the Outcome in Inflammatory Bowel Disease von Astegiano, M, Vernero, M, Finocchiaro, F, Reggiani, S, Ribaldone, D, Sapone, N, Bertolusso, L, Pellicano, R

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Steep-slope nanowire FET with a superlattice in the source extension von Gnani, E., Reggiani, S., Gnudi, A., Baccarani, G.

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Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback von Grassi, R., Gnudi, A., Di Lecce, V., Gnani, E., Reggiani, S., Baccarani, G.

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Radiation-Induced Normal Tissue Damage: Oxidative Stress and Epigenetic Mechanisms von Jiang, Xin, Li, Xinyu, Zhao, Qin, Meng, Lingbin, Wang, Huanhuan, Wang, Bin, Wei, Jinlong, Xin, Ying

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Explanation of the Rugged LDMOS Behavior by Means of Numerical Analysis von Reggiani, S., Baccarani, G., Gnani, E., Gnudi, A., Denison, M., Pendharkar, S., Wise, R., Seetharaman, S.

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Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices von Poli, S., Reggiani, S., Gnudi, A., Gnani, E., Baccarani, G.

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