A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm von Reeson, K. J, Homewood, K. P, Leong, D, Harry, M

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Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2 von Yang, Z., Homewood, K. P., Finney, M. S., Harry, M. A., Reeson, K. J.

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Ion beam synthesized silicides: growth, characterization and devices von Homewood, K.P, Reeson, K.J, Gwilliam, R.M, Kewell, A.K, Lourenço, M.A, Shao, G, Chen, Y.L, Sharpe, J.S, McKinty, C.N, Butler, T

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Mechanism of buried β-SiC formation by implanted carbon in silicon von Reeson, K.J., Stoemenos, J., Hemment, P.L.F.

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On the origin of the 1.5 μm luminescence in ion beam synthesized β-FeSi2 von Leong, D. N., Harry, M. A., Reeson, K. J., Homewood, K. P.

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Structural properties of ion beam synthezised iron-cobalt silicide von HARRY, M. A, CURELLO, G, FINNEY, M. S, REESON, K. J, SEALY, S. J

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Microscope spectrophotometric study of GaAs/AlxGa1-xAs MBE structures von Geatches, R M, Reeson, K J, Criddle, A J, Webb, R P, Pearson, P J, Weiss, B L

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A transmission electron microscope investigation of the dose dependence of the microstructure of silicon-on-insulator structures formed by nitrogen implantation of silicon von MEEKISON, C. D, BOOKER, G. R, REESON, K. J, HEMMENT, P. L. F, PEART, R. F, CHATER, R. J, KILNER, J. A, DAVIS, J. R

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TEM investigation of ion beam synthesized semiconducting FeSi2 von YANG, Z, HOMEWOOD, K. P, REESON, K. J, FINNEY, M. S, HARRY, M. A

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Is there a future for semiconducting silicides? ( invited) von Reeson, Karen J, Sharpe, Jane, Harry, Milton, Leong, Daniel, McKinty, Colin, Kewell, Adrian, Lourenço, Manon, Chen, Yan Ling, Shao, G, Homewood, Kevin P

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The effects of dose and target temperature on low energy SIMOX layers von LI, Y, KILNER, J. A, CHATER, R. J, HEMMENT, P. L. F, NEJIM, A, ROBINSON, A. K, REESON, K. J, MARSH, C. D, BOOKER, G. R

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Interface reaction between Ir films and relaxed SiGe MBE layers by rapid thermal annealing von Curello, G., Gwilliam, R., Harry, M., Reeson, K.J., Sealy, B.J., Rodriguez, T., Almendra, A.

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Dislocation formation related with high oxygen dose implantation on silicon von STOEMENOS, J, REESON, K. J, ROBINSON, A. K, HEMMENT, P. L. F

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Monitoring of SIMOX layer properties and implantation temperature by optical measurements von Harbeke, G, Steigmeier, E F, Hemment, P, Reeson, K J, Jastrzebski, L

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High-performance SOI-CMOS Transistors in oxygen-implanted silicon without epitaxy von Davis, J.R., Reeson, K.J., Hemment, P.L.F., Marsh, C.D.

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Nuclear microprobe ion-channelling analysis of total dielectric isolation structures in silicon von Thornton, J, Robinson, A K, Reeson, K J, Davis, J, Hemment, P L F

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Oxygen rich SIMOX? von Scanlon, P J, Hemment, P L F, Reeson, K J, Robinson, A K, Kilner, J A, Chater, R J, Harbeke, G

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Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis von Reeson, K.J.

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Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation von ROBINSON, A. K, REESON, K. J, HEMMENT, P. L. F

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Study of the microstructure of low energy (70 KeV) oxygen implanted silicon von LI, Y, KILNER, J. A, HEMMENT, P. L. F, ROBINSON, A. K, ZHANG, J. P, REESON, K. J, MARSH, C. D, BOOKER, G. R

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