A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm von Reeson, K. J, Homewood, K. P, Leong, D, Harry, M

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Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2 von Yang, Z., Homewood, K. P., Finney, M. S., Harry, M. A., Reeson, K. J.

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Ion beam synthesized silicides: growth, characterization and devices von Homewood, K.P, Reeson, K.J, Gwilliam, R.M, Kewell, A.K, Lourenço, M.A, Shao, G, Chen, Y.L, Sharpe, J.S, McKinty, C.N, Butler, T

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On the origin of the 1.5 μm luminescence in ion beam synthesized β-FeSi2 von Leong, D. N., Harry, M. A., Reeson, K. J., Homewood, K. P.

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Is there a future for semiconducting silicides? ( invited) von Reeson, Karen J, Sharpe, Jane, Harry, Milton, Leong, Daniel, McKinty, Colin, Kewell, Adrian, Lourenço, Manon, Chen, Yan Ling, Shao, G, Homewood, Kevin P

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Mechanism of buried β-SiC formation by implanted carbon in silicon von Reeson, K.J., Stoemenos, J., Hemment, P.L.F.

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Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ions von CHEN, Y. L, SHAO, G, SHARPE, J, GWILLIAM, R. M, KIRKBY, K. Reeson, HOMEWOOD, K. P, GORINGE, M. J

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Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis von Reeson, K.J.

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Structural properties of ion beam synthezised iron-cobalt silicide von HARRY, M. A, CURELLO, G, FINNEY, M. S, REESON, K. J, SEALY, S. J

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TEM investigation of ion beam synthesized semiconducting FeSi2 von YANG, Z, HOMEWOOD, K. P, REESON, K. J, FINNEY, M. S, HARRY, M. A

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Microscope spectrophotometric study of GaAs/AlxGa1-xAs MBE structures von Geatches, R M, Reeson, K J, Criddle, A J, Webb, R P, Pearson, P J, Weiss, B L

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A transmission electron microscope investigation of the dose dependence of the microstructure of silicon-on-insulator structures formed by nitrogen implantation of silicon von MEEKISON, C. D, BOOKER, G. R, REESON, K. J, HEMMENT, P. L. F, PEART, R. F, CHATER, R. J, KILNER, J. A, DAVIS, J. R

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Interface reaction between Ir films and relaxed SiGe MBE layers by rapid thermal annealing von Curello, G., Gwilliam, R., Harry, M., Reeson, K.J., Sealy, B.J., Rodriguez, T., Almendra, A.

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The effects of dose and target temperature on low energy SIMOX layers von LI, Y, KILNER, J. A, CHATER, R. J, HEMMENT, P. L. F, NEJIM, A, ROBINSON, A. K, REESON, K. J, MARSH, C. D, BOOKER, G. R

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Dislocation formation related with high oxygen dose implantation on silicon von STOEMENOS, J, REESON, K. J, ROBINSON, A. K, HEMMENT, P. L. F

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Determination of crystallite propagation in laser annealed amorphous silicon by normal incidence spectral reflectance von Williams, G., Sands, D., Geatches, R. M., Reeson, K. J.

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Improved subthreshold characteristics of n-channel SOI transistors von Davis, J.R., Glaccum, A.E., Reeson, K., Hemment, P.L.F.

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Order domain boundaries in ion beam synthesized semiconducting FeSi2 layers von Yang, Z., Shao, G., Homewood, K. P., Reeson, K. J., Finney, M. S., Harry, M.

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Electrical, optical and materials properties of ion beam synthesised (IBS) FeSi2 von Reeson, K.J., Finney, M.S., Harry, M.A., Hutchinson, S.V., Tan, Y.S., Leong, D., Bearda, T.R., Yang, Z., Curello, G., Homewood, K.P., Gwilliam, R.M., Sealy, B.J.

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Monitoring of SIMOX layer properties and implantation temperature by optical measurements von Harbeke, G, Steigmeier, E F, Hemment, P, Reeson, K J, Jastrzebski, L

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