The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM von Warren, K.M., Weller, R.A., Mendenhall, M.H., Reed, R.A., Ball, D.R., Howe, C.L., Olson, B.D., Alles, M.L., Massengill, L.W., Schrimpf, R.D., Haddad, N.F., Doyle, S.E., McMorrow, D., Melinger, J.S., Lotshaw, W.T.

Volltext

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits von Dodd, P.E., Schwank, J.R., Shaneyfelt, M.R., Felix, J.A., Paillet, P., Ferlet-Cavrois, V., Baggio, J., Reed, R.A., Warren, K.M., Weller, R.A., Schrimpf, R.D., Hash, G.L., Dalton, S.M., Hirose, K., Saito, H.

Volltext

Impact of Ion Energy and Species on Single Event Effects Analysis von Reed, R.A., Weller, R.A., Mendenhall, M.H., Lauenstein, J.-M., Warren, K.M., Pellish, J.A., Schrimpf, R.D., Sierawski, B.D., Massengill, L.W., Dodd, P.E., Shaneyfelt, M.R., Felix, J.A., Schwank, J.R., Haddad, N.F., Lawrence, R.K., Bowman, J.H., Conde, R.

Volltext

A Single-Event-Hardened Phase-Locked Loop Fabricated in 130 nm CMOS von Loveless, T.D., Massengill, L.W., Bhuva, B.L., Holman, W.T., Reed, R.A., McMorrow, D., Melinger, J.S., Jenkins, P.

Volltext

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs von Kalavagunta, A., Touboul, A., Shen, L., Schrimpf, R.D., Reed, R.A., Fleetwood, D.M., Jain, R.K., Mishra, U.K.

Volltext

Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch von Warren, K.M., Sierawski, B.D., Reed, R.A., Weller, R.A., Carmichael, C., Lesea, A., Mendenhall, M.H., Dodd, P.E., Schrimpf, R.D., Massengill, L.W., Tan Hoang, Hsing Wan, De Jong, J.L., Padovani, R., Fabula, J.J.

Volltext

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection von Black, J.D., Ball, D.R., Robinson, W.H., Fleetwood, D.M., Schrimpf, R.D., Reed, R.A., Black, D.A., Warren, K.M., Tipton, A.D., Dodd, P.E., Haddad, N.F., Xapsos, M.A., Kim, H.S., Friendlich, M.

Volltext

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs von Tipton, A.D., Pellish, J.A., Hutson, J.M., Baumann, R., Deng, X., Marshall, A., Xapsos, M.A., Kim, H.S., Friendlich, M.R., Campola, M.J., Seidleck, C.M., LaBel, K.A., Mendenhall, M.H., Reed, R.A., Schrimpf, R.D., Weller, R.A., Black, J.D.

Volltext

Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry von Warren, K.M., Sternberg, A.L., Weller, R.A., Baze, M.P., Massengill, L.W., Reed, R.A., Mendenhall, M.H., Schrimpf, R.D.

Volltext

Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS von DasGupta, S., Witulski, A.F., Bhuva, B.L., Alles, M.L., Reed, R.A., Amusan, O.A., Ahlbin, J.R., Schrimpf, R.D., Massengill, L.W.

Volltext

A Probabilistic Analysis Technique Applied to a Radiation-Hardened-by-Design Voltage-Controlled Oscillator for Mixed-Signal Phase-Locked Loops von Loveless, T.D., Massengill, L.W., Bhuva, B.L., Holman, W.T., Casey, M.C., Reed, R.A., Nation, S.A., McMorrow, D., Melinger, J.S.

Volltext

The effect of metallization Layers on single event susceptibility von Kobayashi, A.S., Ball, D.R., Warren, K.M., Reed, R.A., Haddad, N., Mendenhall, M.H., Schrimpf, R.D., Weller, R.A.

Volltext

Role of heavy-ion nuclear reactions in determining on-orbit single event error rates von Howe, C.L., Weller, R.A., Reed, R.A., Mendenhall, M.H., Schrimpf, R.D., Warren, K.M., Ball, D.R., Massengill, L.W., LaBel, K.A., Howard, J.W., Haddad, N.F.

Volltext

Laser-Induced Current Transients in Silicon-Germanium HBTs von Pellish, J.A., Reed, R.A., McMorrow, D., Melinger, J.S., Jenkins, P., Sutton, A.K., Diestelhorst, R.M., Phillips, S.D., Cressler, J.D., Pouget, V., Pate, N.D., Kozub, J.A., Mendenhall, M.H., Weller, R.A., Schrimpf, R.D., Marshall, P.W., Tipton, A.D., Niu, G.

Volltext

C-CREST Technique for Combinational Logic SET Testing von Ahlbin, J.R., Black, J.D., Massengill, L.W., Amusan, O.A., Balasubramanian, A., Casey, M.C., Black, D.A., McCurdy, M.W., Reed, R.A., Bhuva, B.L.

Volltext

An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs von Sutton, A.K., Bellini, M., Cressler, J.D., Pellish, J.A., Reed, R.A., Marshall, P.W., Guofu Niu, Vizkelethy, G., Turowski, M., Raman, A.

Volltext

Nociceptive electrical stimulation increases mean arterial blood pressure without an evident electroencephalographic response in dogs anesthetized with sevoflurane von Thomas, C., Sakai, D.M., Quandt, J.E., Barletta, M., Reed, R.A.

Volltext

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future von Reed, R.A., Kinnison, J., Pickel, J.C., Buchner, S., Marshall, P.W., Kniffin, S., LaBel, K.A.

Volltext

Measurement and Analysis of Interconnect Crosstalk Due to Single Events in a 90 nm CMOS Technology von Balasubramanian, A., Amusan, O.A., Bhuva, B.L., Reed, R.A., Sternberg, A.L., Massengill, L.W., McMorrow, D., Nation, S.A., Melinger, J.S.

Volltext

Diamond Vacuum Electronic Device Behavior After High Neutron Fluence Exposure von Davidson, J.L., Weng Poo Kang, Subramanian, K., Holmes-Siedle, A.G., Reed, R.A., Galloway, K.F.

Volltext