Optical Properties of Rectangular Cross-sectional ZnS Nanowires von Xiong, Qihua, Chen, G, Acord, J. D, Liu, X, Zengel, J. J, Gutierrez, H. R, Redwing, J. M, Lew Yan Voon, L. C, Lassen, B, Eklund, P. C

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Diameter-Controlled Synthesis of Silicon Nanowires Using Nanoporous Alumina Membranes von Bogart, T. E., Dey, S., Lew, K.-K., Mohney, S. E., Redwing, J. M.

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Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition von Fanton, M.A., Weiland, B.E., Redwing, J.M.

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Measuring the specific contact resistance of contacts to semiconductor nanowires von Mohney, S.E., Wang, Y., Cabassi, M.A., Lew, K.K., Dey, S., Redwing, J.M., Mayer, T.S.

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Crystallographic wet chemical etching of GaN von Stocker, D. A., Schubert, E. F., Redwing, J. M.

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Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical–chemical vapor deposition von Zeng, X. H., Pogrebnyakov, A. V., Zhu, M. H., Jones, J. E., Xi, X. X., Xu, S. Y., Wertz, E., Li, Qi, Redwing, J. M., Lettieri, J., Vaithyanathan, V., Schlom, D. G., Liu, Zi-Kui, Trithaveesak, O., Schubert, J.

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Evolution of threading dislocations in MOCVD-grown GaN films on (1 1 1) Si substrates von Weng, X., Raghavan, S., Acord, J.D., Jain, A., Dickey, E.C., Redwing, J.M.

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Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition von Pogrebnyakov, A. V., Redwing, J. M., Jones, J. E., Xi, X. X., Xu, S. Y., Li, Qi, Vaithyanathan, V., Schlom, D. G.

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Optical properties of Si-doped GaN von Schubert, E. F., Goepfert, I. D., Grieshaber, W., Redwing, J. M.

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Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction von Qiao, D., Yu, L. S., Lau, S. S., Redwing, J. M., Lin, J. Y., Jiang, H. X.

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Critical current density and resistivity of MgB2 films von Rowell, J. M., Xu, S. Y., Zeng, X. H., Pogrebnyakov, A. V., Li, Qi, Xi, X. X., Redwing, J. M., Tian, W., Pan, Xiaoqing

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X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN von Rickert, K. A., Ellis, A. B., Himpsel, F. J., Lu, H., Schaff, W., Redwing, J. M., Dwikusuma, F., Kuech, T. F.

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Nanoscale disorder in pure and doped MgB2 thin films von Zhu, Y, Pogrebnyakov, A V, Wilke, R H, Chen, K, Xi, X X, Redwing, J M, Zhuang, C G, Feng, Q R, Gan, Z Z, Singh, R K, Shen, Y, Newman, N, Rowell, J M, Hunte, F, Jaroszynski, J, Larbalestier, D C, Baily, S A, Balakirev, F F, Voyles, P M

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Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor von Miller, E. J., Dang, X. Z., Wieder, H. H., Asbeck, P. M., Yu, E. T., Sullivan, G. J., Redwing, J. M.

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High voltage (450 V) GaN Schottky rectifiers von Bandić, Z. Z., Bridger, P. M., Piquette, E. C., McGill, T. C., Vaudo, R. P., Phanse, V. M., Redwing, J. M.

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In situ epitaxial MgB2 thin films for superconducting electronics von Zeng, Xianghui, Pogrebnyakov, Alexej V, Kotcharov, Armen, Jones, James E, Xi, X X, Lysczek, Eric M, Redwing, Joan M, Xu, Shengyong, Li, Qi, Lettieri, James, Schlom, Darrell G, Tian, Wei, Pan, Xiaoqing, Liu, Zi-Kui

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High upper critical field and irreversibility field in MgB2 coated-conductor fibers von Ferrando, V., Orgiani, P., Pogrebnyakov, A. V., Chen, J., Li, Qi, Redwing, J. M., Xi, X. X., Giencke, J. E., Eom, Chang-Beom, Feng, Qing-Rong, Betts, J. B., Mielke, C. H.

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Fabrication of cobalt silicide nanowire contacts to silicon nanowires von MOHAMMAD, Ahmad M, DEY, Soham, LEW, K.-K, REDWING, J. M, MOHNEY, S. E

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Planar MgB2 superconductor-normal metal-superconductor Josephson junctions fabricated using epitaxial MgB2∕TiB2 bilayers von Chen, Ke, Cui, Y., Li, Qi, Xi, X. X., Cybart, Shane A., Dynes, R. C., Weng, X., Dickey, E. C., Redwing, J. M.

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Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates von Lew, Kok-Keong, Redwing, Joan M

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