Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 µm VCSELs von Reddy, M.H.M., Asano, T., Koda, R., Buell, D.A., Coldren, L.A.

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Continuous-wave operation of 1.55-[mu]m vertical-cavity surface-emitting laser with digital-alloy active region using submonolayer superlattices von Reddy, M.H.M, Buell, D.A, Feezell, D, Asano, T, Koda, R, Huntington, A.S, Coldren, L.A

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Lattice-matched Al 0.95Ga 0.05AsSb oxide for current confinement in InP-based long wavelength VCSELs von Reddy, M.H.M., Buell, D.A., Asano, T., Koda, R., Feezell, D., Huntington, A.S., Coldren, L.A.

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InP-based all-epitaxial 1.3-[mu]m VCSELs with selectively etched AlInAs apertures and Sb-based DBRs von Asano, T, Feezell, D, Koda, R, Reddy, M.H.M, Buell, D.A, Huntington, A.S, Hall, E, Nakagawa, S, Coldren, L.A

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InP-based all-epitaxial 1.3-μm VCSELs with selectively etched AlInAs apertures and Sb-based DBRs von Asano, T., Feezell, D., Koda, R., Reddy, M.H.M., Buell, D.A., Huntington, A.S., Hall, E., Nakagawa, S., Coldren, L.A.

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Continuous-wave operation of 1.55-μm vertical-cavity surface-emitting laser with digital-alloy active region using submonolayer superlattices von Reddy, M.H.M., Buell, D.A., Feezell, D., Asano, T., Koda, R., Huntington, A.S., Coldren, L.A.

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Lattice-matched Al0.95Ga0.05AsSb oxide for current confinement in InP-based long wavelength VCSELs von REDDY, M. H. M, BUELL, D. A, ASANO, T, KODA, R, FEEZELL, D, HUNTINGTON, A. S, COLDREN, L. A

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Current status of epitaxial 1.31-1.55 /spl mu/m VCSELs on InP von Reddy, M.H.M., Buell, D.A., Huntington, A.S., Koda, R., Freezell, D., Asano, T., Jim, J.K., Hall, E., Nakagawa, S., Coldren, L.A.

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Lattice-matched Al/sub 0.95/Ga/sub 0.05/AsSb oxide for current confinement in InP-based long wavelength VCSELs von Reddy, M.H.M., Buell, D.A., Asano, T., Koda, R., Freezell, D., Huntington, A.S., Coldren, L.A.

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