In-polar InN grown by plasma-assisted molecular beam epitaxy von Gallinat, Chad S., Koblmüller, Gregor, Brown, Jay S., Bernardis, Sarah, Speck, James S., Chern, Grace D., Readinger, Eric D., Shen, Hongen, Wraback, Michael

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Excitation wavelength dependence of terahertz emission from InN and InAs von Chern, Grace D., Readinger, Eric D., Shen, Hongen, Wraback, Michael, Gallinat, Chad S., Koblmüller, Gregor, Speck, James S.

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Crystal-field split levels of Nd3+ ions in GaN measured by luminescence spectroscopy von Metcalfe, Grace D., Readinger, Eric D., Shen, Hongen, Woodward, Nathaniel T., Dierolf, Volkmar, Wraback, Michael

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Excitation Wavelength Dependence Of Terahertz Emission From Indium Nitride Thin Films von Chern, Grace D, Readinger, Eric D, Shen, Hongen, Wraback, Michael, Gallinat, Chad S, Koblmuller, Gregor, Speck, James S

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Crystal-field split levels of Nd{sup 3+} ions in GaN measured by luminescence spectroscopy von Metcalfe, Grace D., Readinger, Eric D., Shen, Hongen, Wraback, Michael, Woodward, Nathaniel T., Dierolf, Volkmar

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Crystal-field split levels of Nd 3 + ions in GaN measured by luminescence spectroscopy von Metcalfe, Grace D., Readinger, Eric D., Shen, Hongen, Woodward, Nathaniel T., Dierolf, Volkmar, Wraback, Michael

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Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy von Metcalfe, Grace D., Readinger, Eric D., Enck, Ryan, Shen, Hongen, Wraback, Michael, Woodward, Nathaniel T., Poplawsky, Jon, Dierolf, Volkmar

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Energy levels of Nd3+ ions in GaN von Metcalfe, Grace D., Readinger, Eric D., Shen, Hongen, Woodward, Nathaniel T., Dierolf, Volkmar, Wraback, Michael

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Energy levels of Nd 3+ ions in GaN von Metcalfe, Grace D., Readinger, Eric D., Shen, Hongen, Woodward, Nathaniel T., Dierolf, Volkmar, Wraback, Michael

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Device Challenges for Making a p-Side Down HVPE-Grown n-InGaN/p-GaN Single Heterostructure LED von Reed, Meredith, Readinger, Eric D., Shen, P., Wraback, Michael, Syrkin, Alexander, Usikov, Alexander, Dmitriev, Vladimir

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Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN/GaN and p-GaN Templates von Readinger, Eric D., Chern, Grace, Reed, Meredith, Shen, P., Wraback, Michael, Syrkin, Alexander, Usikov, Alexander, Kovalenkov, Oleg, Ivantsov, Vladimir, Dmitriev, Vladimir

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Fabrication and Characterization of Ultraviolet Light Emitting Diodes with Nanometer Scale Compositionally Inhomogeneous Active Regions von Sampath, Anand V., Reed, Meredith, Chua, Christoper, Garrett, Gregory, Readinger, Eric D., Usikov, Alexander, Kovalenkov, Oleg, Shapovalova, Lisa, Shen, H, Dimtriev, Vladimir, Johnson, Noble, Wraback, Michael

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Exploiting the Negative Polarization Properties of Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) Heterostructures to Achieve Frequency Doubled Blue-green Lasers with Deep UV... von Reed, Meredith, Readinger, Eric D

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Exploiting the Negative Polarization Properties of Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) Heterostructures to Achieve Frequency Doubled Blue-green Lasers with Deep Ul... von Reed, Meredith, Readinger, Eric D

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Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates von Sampath, A.V., Garrett, G.G., Readinger, E.D., Shen, H., Wraback, M., Grandusky, J.R., Schowalter, L.J.

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Physical and Optical Characterization of GaN Doped with Neodymium grown by Plasma-Assisted Molecular Beam Epixaty von Readinger, E.D., Chern-Metcalfe, G.D., Hongen Shen, Wood, M., Wraback, M., Dierolf, V.

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Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN and p-GaN Templates von Readinger, Eric D., Chern, Grace, Reed, Meredith, Shen, P., Wraback, Michael, Syrkin, Alexander, Usikov, Alexander, Kovalenkov, Oleg, Ivantsov, Vladimir, Dmitriev, Vladimir

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Fabrication and Characterization of Ultraviolet Light Emitting Diodes with Nanometer Scale Compositionally Inhomogeneous Active Regions von Sampath, Anand V., Reed, Meredith, Garrett, Gregory, Readinger, Eric D., Shen, P., Wraback, Michael, Chua, Christoper, Johnson, Noble, Usikov, Alexander, Kovalenkov, Oleg, Shapovalova, Lisa, Dimtriev, Vladimir

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Improved UV Nitride Light Emitting Diode With Engineered Spontaneous and Piezoelectric Charges von Shen, Paul H, Reed, Meredith L, Readinger, Eric D, Wraback, Michael

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Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging von Wraback, Michael, Chern, Grace D, Readinger, Eric D, Shen, Paul H, Koblmueller, Gregor, Gallinat, Chad S, Speck, James S, Schaff, William J

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