In situ surface analytical investigation of the thermal oxidation of Ti–Al intermetallics up to 1000 °C von Kovács, K, Perczel, I.V, Josepovits, V.K, Kiss, G, Réti, F, Deák, P

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Thermal behaviour of WO3 and WO3/TiO2 materials von PINTER, Z, SASSI, Z, KORNELY, S, PION, Ch, PERCZEL, I. V, KOVACS, K, BENE, R, BUREAU, J. C, RETI, F

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Chemical reactions in the detection of acetone and NO by a CeO2 thin film von Bene, R, Perczel, I.V, Réti, F, Meyer, F.A, Fleisher, M, Meixner, H

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Study of oxide semiconductor sensor materials by selected methods von Kiss, G, Pintér, Z, Perczel, I.V, Sassi, Z, Réti, F

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CO sensitivity of the PtO/SnO2 and PdO/SnO2 layer structures: Kelvin probe and XPS analysis von KISS, G, JOSEPOVITS, V. K, KOVACS, K, OSTRICK, B, FLEISCHER, M, MEIXNER, H, RETI, F

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Impedance spectroscopic and secondary ion mass spectrometric studies of β-Ga2O3/O2 interaction von KISS, G, KRAFCSIK, O. H, KOVACS, K, JOSEPOVITS, V. K, FLEISCHER, M, MEIXNER, H, DEAK, P, RETI, F

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Effect of coadsorption of reducing gases on the conductivity of β-Ga2O3 thin films in the presence of O2 von RETI, F, FLEISCHER, M, MEIXNER, H, GIBER, J

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Influence of water on the coadsorption of oxidizing and reducing gases on the β-Ga2O3 surface von RETI, F, FLEISCHER, M, MEIXNER, H, GIBER, J

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Impedance spectroscopic study of β-Ga2O3/O2 interaction von KISS, G, PERCZEL, I. V, FLEISCHER, M, RETI, F, MEIXNER, H, GIBER, J

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Controlled electrical conductivity in SnO2 thin films by oxygen or hydrocarbon assisted atomic layer epitaxy von UTRIAINEN, M, KOVACS, K, CAMPBELL, J. M, NIINISTÖ, L, RETI, F

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O.061 Effect of human organism on the oxide layer formed on titanium osteosynthesis plates von Velich, N., Kiss, G., Réti, F., Szabó, G.

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On the surface thermodynamics of γ-Al2O3 derived from the reaction with chlorine von RETI, F, BERTOTI, I, MINK, G, VARSANYI, G

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Study of the behavior of CeO2 in SO2-containing environment von VARHEGYI, E. B, GERBLINGER, J, RETI, F, PERCZEL, I. V, MEIXNER, H

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High-temperature semiconductor gas sensors von Bene, R, Pintér, Z, Perczel, I.V, Fleischer, M, Réti, F

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Role of oxygen vacancy defect states in the n -type conduction of β-Ga2O3 von Hajnal, Zoltán, Miró, József, Kiss, Gábor, Réti, Ferenc, Deák, Péter, Herndon, Roy C., Kuperberg, J. Michael

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Comparison of the water effect on the resistance of different semiconducting metal oxides von Réti, F., Fleischer, M., Gerblinger, J., Lampe, U., Várhegyi, E.B., Perczel, I.V., Meixner, H., Giber, J.

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Isomerization of n-hexyl and s-octyl radicals by 1,5 and 1,4 intramolecular hydrogen atom transfer reactions von DOBE, S, BERCES, T, RETI, F, MARTA, F

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Thermodynamic characterization of a γ-Al2O3 surface by an exclusively surface O/Cl exchange reaction von RETI, F, JOSEPOVITS, V. K, PERCZEL, I. V

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CO sensitivity of the PtO/SnO 2 and PdO/SnO 2 layer structures: Kelvin probe and XPS analysis von Kiss, G, Josepovits, V.K, Kovács, K, Ostrick, B, Fleischer, M, Meixner, H, Réti, F

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Integrated mass spectrometer–microreactor system for the in situ investigation of oxide semiconductor sensors von Bene, R., Hárs, G., Perczel, I. V., Réti, F.

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