Chemical modification of diamond surfaces using a chlorinated surface as an intermediate state von Ando, Toshihiro, Nishitani-Gamo, Mikka, Rawles, Robin E., Yamamoto, Kazuo, Kamo, Mutsukazu, Sato, Yoichiro

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Effect of growth-rate ratio on surface morphology of homoepitaxial diamond (100) and (111) von Rawles, Robin E., Morris, William G., D’Evelyn, Mark P.

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Novel method for chemical vapor deposition and atomic layer epitaxy using radical chemistry von Hukka, Terttu I., Rawles, Robin E., D'Evelyn, Mark P.

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Investigation of Diamond Homoepitaxy by In Situ Fizeau Interferometry: The Role of Oxygen von Rawles, Robin E, Kittrell, Carter, D'Evelyn, Mark P

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Low-Pressure Diamond Growth Using a Secondary Radical Source von Hukka, Terttu I, Rawles, Robin E, D'Evelyn, Mark P

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Progress Toward Atomic Layer Epitaxy of Diamond: Diamond Films Grown One Layer at a Time von Gat, Roy, Hukka, Terttu I, Rawles, Robin E, D'Evelyn, Mark P

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