Electronic and thermal transport study of sinusoidally corrugated nanowires aiming to improve thermoelectric efficiency von Park, K H, Martin, P N, Ravaioli, U

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A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation von Winstead, B., Ravaioli, U.

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Anharmonic decay of g-process longitudinal optical phonons in silicon von Aksamija, Z., Ravaioli, U.

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Coupled electron and thermal transport simulation of self-heating effects in junctionless MOSFET von Mohamed, M, Aksamija, Z, Ravaioli, U

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Enhancement of thermoelectric efficiency in non-uniform semiconductor nanowires von Park, K H, Martin, P N, Ravaioli, U

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Iteration scheme for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures von Trellakis, A., Galick, A. T., Pacelli, A., Ravaioli, U.

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Phonon-Limited Transport in Graphene Pseudospintronic Devices von Estrada, Z. J., Dellabetta, B., Ravaioli, U., Gilbert, M. J.

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Simulation of Schottky barrier MOSFETs with a coupled quantum injection/Monte Carlo technique von Winstead, B., Ravaioli, U.

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Monte Carlo simulations of double-gate MOSFETs von Kathawala, G.A., Winstead, B., Ravaioli, U.

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Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices von Wordelman, C.J., Ravaioli, U.

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Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation von Giusi, G., Iannaccone, G., Mohamed, M., Ravaioli, U.

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Theory for a quantum modulated transistor von Sols, Fernando, Macucci, M., Ravaioli, U., Hess, Karl

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Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors von Duncan, A., Ravaioli, U., Jakumeit, J.

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Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs von Godoy, A., Ruiz, F., Sampedro, C., Gámiz, F., Ravaioli, U.

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Efficient Numerical Solution of the 3-D Semiconductor Poisson Equation for Monte Carlo Device Simulation von Aksamija, Z, Ravaioli, U

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MC simulation of strained-Si MOSFET with full-band structure and quantum correction von Xiao-Feng Fan, Xin Wang, Winstead, B., Register, L.F., Ravaioli, U., Banerjee, S.K.

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Three-dimensional spectral solution of the Schrödinger equation for arbitrary band structures von Trellakis, A., Ravaioli, U.

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On the possibility of transistor action based on quantum interference phenomena von SOLS, F, MACUCCI, M, RAVAIOLI, U, HESS, K

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Energy conservation in collision broadening over a sequence of scattering events in semiclassical Monte Carlo simulation von Aksamija, Z., Ravaioli, U.

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Simulation of a quantum-dot flash memory von Iannaccone, G., Trellakis, A., Ravaioli, U.

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