Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors von Rathkanthiwar, Shashwat, Kalra, Anisha, Solanke, Swanand V., Mohta, Neha, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.

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Doping and compensation in heavily Mg doped Al-rich AlGaN films von Bagheri, Pegah, Klump, Andrew, Washiyama, Shun, Hayden Breckenridge, M., Kim, Ji Hyun, Guan, Yan, Khachariya, Dolar, Quiñones-García, Cristyan, Sarkar, Biplab, Rathkanthiwar, Shashwat, Reddy, Pramod, Mita, Seiji, Kirste, Ronny, Collazo, Ramón, Sitar, Zlatko

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Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates von Rathkanthiwar, Shashwat, Houston Dycus, J., Mita, Seiji, Kirste, Ronny, Tweedie, James, Collazo, Ramon, Sitar, Zlatko

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High electron mobility in AlN:Si by point and extended defect management von Bagheri, Pegah, Quiñones-Garcia, Cristyan, Khachariya, Dolar, Rathkanthiwar, Shashwat, Reddy, Pramod, Kirste, Ronny, Mita, Seiji, Tweedie, James, Collazo, Ramón, Sitar, Zlatko

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Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling von Rathkanthiwar, Shashwat, Kalra, Anisha, Muralidharan, Rangarajan, Nath, Digbijoy N., Raghavan, Srinivasan

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Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111) von Rathkanthiwar, Shashwat, Kalra, Anisha, Remesh, Nayana, Bardhan, Abheek, Muralidharan, Rangarajan, Nath, Digbijoy N., Raghavan, Srinivasan

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On the conduction mechanism in compositionally graded AlGaN von Rathkanthiwar, Shashwat, Bagheri, Pegah, Khachariya, Dolar, Kim, Ji Hyun, Kajikawa, Yasutomo, Reddy, Pramod, Mita, Seiji, Kirste, Ronny, Moody, Baxter, Collazo, Ramon, Sitar, Zlatko

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Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates von Khachariya, Dolar, Mita, Seiji, Reddy, Pramod, Dangi, Saroj, Dycus, J. Houston, Bagheri, Pegah, Breckenridge, M. Hayden, Sengupta, Rohan, Rathkanthiwar, Shashwat, Kirste, Ronny, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramón, Pavlidis, Spyridon

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High p-conductivity in AlGaN enabled by polarization field engineering von Rathkanthiwar, Shashwat, Reddy, Pramod, Moody, Baxter, Quiñones-García, Cristyan, Bagheri, Pegah, Khachariya, Dolar, Dalmau, Rafael, Mita, Seiji, Kirste, Ronny, Collazo, Ramón, Sitar, Zlatko

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High conductivity in Ge-doped AlN achieved by a non-equilibrium process von Bagheri, Pegah, Quiñones-Garcia, Cristyan, Khachariya, Dolar, Loveless, James, Guan, Yan, Rathkanthiwar, Shashwat, Reddy, Pramod, Kirste, Ronny, Mita, Seiji, Tweedie, James, Collazo, Ramón, Sitar, Zlatko

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High conductivity and low activation energy in p-type AlGaN von Rathkanthiwar, Shashwat, Bagheri, Pegah, Khachariya, Dolar, Mita, Seiji, Quiñones-García, Cristyan, Guan, Yan, Moody, Baxter, Reddy, Pramod, Kirste, Ronny, Collazo, Ramón, Sitar, Zlatko

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Anderson transition in compositionally graded p-AlGaN von Rathkanthiwar, Shashwat, Reddy, Pramod, Quiñones, Cristyan E., Loveless, James, Kamiyama, Masahiro, Bagheri, Pegah, Khachariya, Dolar, Eldred, Tim, Moody, Baxter, Mita, Seiji, Kirste, Ronny, Collazo, Ramón, Sitar, Zlatko

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Si nanowire growth on sapphire: Classical incubation, reverse reaction, and steady state supersaturation von Shakthivel, Dhayalan, Rathkanthiwar, Shashwat, Raghavan, Srinivasan

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Polarization independent grating in a GaN-on-sapphire photonic integrated circuit von Suraj, Rathkanthiwar, Shashwat, Raghavan, Srinivasan, Selvaraja, Shankar Kumar

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Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal-heterojunction-metal broadband UV-A/UV-C detector von Kalra, Anisha, Vura, Sandeep, Rathkanthiwar, Shashwat, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.

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Polarization-Graded AlGaN Solar-Blind p-i-n Detector With 92% Zero-Bias External Quantum Efficiency von Kalra, Anisha, Rathkanthiwar, Shashwat, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.

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Performance and reliability of state-of-the-art commercial UVC light emitting diodes von Loveless, James, Kirste, Ronny, Moody, Baxter, Reddy, Pramod, Rathkanthiwar, Shashwat, Almeter, Jack, Collazo, Ramon, Sitar, Zlatko

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V-Pits-Induced Photoresponse Enhancement in AlGaN UV-B Photodetectors on Si (111) von Rathkanthiwar, Shashwat, Kalra, Anisha, Muralidharan, Rangarajan, Nath, Digbijoy N., Raghavan, Srinivasan

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Material-to-device performance correlation for AlGaN-based solar-blind p-i-n photodiodes von Kalra, Anisha, Rathkanthiwar, Shashwat, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N

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Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors von Rathkanthiwar, Shashwat, Kalra, Anisha, Muralidharan, Rangarajan, Nath, Digbijoy N., Raghavan, Srinivasan

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