The development of hamstring strength over the course of a simulated soccer match von Rasp, Dominic Michael, Paternoster, Florian Kurt, Zauser, Michael, Kern, Jan, Schwirtz, Ansgar

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Precise instruction and consideration of the vertical and horizontal force component increases validity and reliability of the 90:20 Isometric Posterior Chain Test von Rasp, Dominic Michael, Paternoster, Florian Kurt, Kern, Jan, Schwirtz, Ansgar

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Polytype stability and defects in differently doped bulk SiC von Schmitt, Erwin, Straubinger, Thomas, Rasp, Michael, Vogel, Michael, Wohlfart, Andreas

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Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT von Schmitt, Erwin, Wohlfart, Andreas, Straubinger, Thomas L., Rasp, Michael, Vogel, Michael

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Quality Aspects for the Production of SiC Bulk Crystals von Schmitt, Erwin, Straubinger, Thomas L., Rasp, Michael, Weber, Arnd Dietrich

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Connection board, optoelectronic component arrangement and illumination device von Rasp Michael, Wagner Konrad

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PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals von Schmitt, Erwin, Sadowski, Horst, Reshanov, Sergey A., Straubinger, Thomas L., Rasp, Michael, Bickermann, Matthias

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Anodische Oxidation von 2-Thiobarbitursäuren unter Bildung neuartiger, tetracyclischer Dimerer / Anodic Oxidation of 2-Thiobarbituric Acids under Formation of New Tetracyclic Dimer... von Thomas, Hans Günter, Rasp, Michael, Raabe, Gerhard

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CONNECTION BOARD, OPTOELECTRONIC COMPONENT ARRANGEMENT AND ILLUMINATION DEVICE von RASP MICHAEL, WAGNER KONRAD

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Study of Boron Incorporation During PVT Growth of p-type SiC Crystals von Hofmann, Dieter, Wellmann, Peter J., Weingärtner, Roland, Winnacker, Albrecht, Straubinger, Thomas L., Bickermann, Matthias, Rasp, Michael

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Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions von Schmitt, Erwin, Selder, M., Kadinski, L., Eckstein, Robert, Kölbl, M., Rasp, Michael, Weber, Arnd Dietrich

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Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method von Wellmann, Peter J., Weingärtner, Roland, Winnacker, Albrecht, Straubinger, Thomas L., Bickermann, Matthias, Rasp, Michael

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Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC von Hofmann, Dieter, Wellmann, Peter J., Weingärtner, Roland, Winnacker, Albrecht, Straubinger, Thomas L., Bickermann, Matthias, Rasp, Michael

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Defect reduction in sublimation grown SiC bulk crystals von Schmitt, Erwin, Straubinger, Thomas, Rasp, Michael, Weber, Arnd-Dietrich

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Connection board, optoelectronic component arrangement, and illumination device von RASP MICHAEL, WAGNER KONRAD

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CONNECTION BOARD, OPTOELECTRONIC COMPONENT ARRANGEMENT, AND ILLUMINATION DEVICE von WAGNER, KONRAD, RASP, MICHAEL

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Anschlussträger, optoelektronische Bauelementanordnung und Beleuchtungsvorrichtung von WAGNER, KONRAD, RASP, MICHAEL

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LED circuit arrangement having a diode rectifier von Hollnberger, Peter, Rasp, Michael, Hofmann, Markus

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LED circuit arrangement having a diode rectifier von RASP MICHAEL, HOFMANN MARKUS, HOLLNBERGER PETER

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METHOD FOR MARKING SEMICONDUCTOR WAFERS, SEMICONDUCTOR WAFER, AND SEMICONDUCTOR COLUMN von JOOSS, WOLFGANG, KRÜMBERG, JENS, RASP, MICHAEL

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