Identification of the dominant nitrogen defect in silicon von Jones, R, Öberg, S, Berg Rasmussen F, Bech Nielsen B

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The nitrogen-pair oxygen defect in silicon von Berg Rasmussen, F., Öberg, S., Jones, R., Ewels, C., Goss, J., Miro, J., Deák, P.

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Structure determination of the indium-induced Si ( 111 ) − ( 4 × 1 ) reconstruction by surface x-ray diffraction von Bunk, O., Falkenberg, G., Zeysing, J. H., Lottermoser, L., Johnson, R. L., Nielsen, M., Berg-Rasmussen, F., Baker, J., Feidenhans’l, R.

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Ge(001)--Pb -Pb: low-temperature two-dimensional phase transition von Bunk, O, Nielsen, M M, Zeysing, J H, Falkenberg, G, Berg-Rasmussen, F, Nielsen, M, Kumpf, C, Su, Y, Feidenhans'l, R, Johnson, R L

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Ge(001)-matrix-Pb ↔ matrix-Pb: low-temperature two-dimensional phase transition von Bunk, O, Nielsen, M M, Zeysing, J H, Falkenberg, G, Berg-Rasmussen, F, Nielsen, M, Kumpf, C, Su, Y, Feidenhans'l, R, Johnson, R L

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Uniaxial stress studies on the dominant nitrogen defect in silicon and germanium von Berg Rasmussen, F., Bech Nielsen, B.

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Structure determination of the indium-induced Ge(103)-(1×1) reconstruction by surface X-ray diffraction von Bunk, O, Falkenberg, G, Zeysing, J.H, Lottermoser, L, Johnson, R.L, Nielsen, M, Berg-Rasmussen, F, Feidenhans'l, R

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High-Field EPR Spectroscopy of Thermal Donors in Silicon von Gregorkiewicz, T., Ammerlaan, C.A.J., Rasmussen, F. Berg, Dirksen, Ruud

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Nitrogen in germanium: Identification of the pair defect von Berg Rasmussen F, Jones, R, Öberg, S

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Epitaxial clusters studied by synchrotron X-ray diffraction and scanning tunneling microscopy von Nielsen, M., Feidenhans'l, R., Berg Rasmussen, F., Baker, J., Falkenberg, G., Lottermoser, L., Johnson, R.L., Steinfort, A.J., Scholte, P.M.L.

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The Nitrogen Pair in Crystalline Silicon Studied by Ion Channeling von Öberg, Sven, Bech Nielsen, B., Jones, R., Berg Rasmussen, F.

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Magnetic resonance spectroscopy of hydrogen-passivated double donors in silicon von Zevenbergen, I.S., Martynov, Yu.V., Berg Rasmussen, F., Gregorkiewicz, T., Ammerlaan, C.A.J.

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Comment on "Role played by N and N-N impurities in type-IV semiconductors" von Berg Rasmussen F, Bech Nielsen B, Jones, R, Öberg, S

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The NNO Defect in Silicon von Jones, R., Deák, Peter, Öberg, Sven, Goss, Jonathan P., Ewels, C.P., Miró, J., Berg Rasmussen, F.

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Particle Size Distribution of an Ni/SiO2 Catalyst Determined by ASAXS von Rasmussen, F.Berg, Molenbroek, A.M., Clausen, B.S., Feidenhans, R.

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Theoretical and isotopic infrared absorption investigations of nitrogen-oxygen defects in silicon von Jones, R, Ewels, C, Goss, J, Miro, J, Deak, P, Oberg, S, Rasmussen, F B

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Strain relaxation in thin films of Cu grown on Ni(0 0 1) von Berg Rasmussen, Frank, Baker, Jeff, Nielsen, Mourits, Feidenhans'l, Robert, Johnson, Robert L.

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Microstructure of the nitrogen pair in crystalline silicon studied by ion channeling von Rasmussen, FB, Nielsen, BB

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Ge(001)-(2 1 0 3)-Pb <-> (2 1 0 6)-Pb: low-temperature two-dimensional phase transition von Bunk, O, Nielsen, M. M, Zeysing, J. H, Falkenberg, G, Berg-Rasmussen, F, Nielsen, M, Kumpf, C, Su, Y, Feidenhans'l, R, Johnson, R. L

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Structure determination of the indium-induced Si(111)-(4x1) reconstruction by surface x-ray diffraction von Bunk, O, Falkenberg, G, Zeysing, J. H, Lottermoser, L, Johnson, R. L, Nielsen, M, Berg-Rasmussen, F, Baker, J, Feidenhans'l, R

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