Physical model for enhanced interface-trap formation at low dose rates von Rashkeev, S.N., Cirba, C.R., Fleetwood, D.M., Schrimpf, R.D., Witczak, S.C., Michez, A., Pantelides, S.T.

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Effects of hydrogen motion on interface trap formation and annealing von Rashkeev, S.N., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.T.

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Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling von Batyrev, I.G., Hughart, D., Durand, R., Bounasser, M., Tuttle, B.R., Fleetwood, D.M., Schrimpf, R.D., Rashkeev, S.N., Dunham, G.W., Law, M., Pantelides, S.T.

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Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment von Lambrecht, W. R. L., Limpijumnong, S., Rashkeev, S. N., Segall, B.

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Multi-Scale Simulation of Radiation Effects in Electronic Devices von Schrimpf, R.D., Warren, K.M., Ball, D.R., Weller, R.A., Reed, R.A., Fleetwood, D.M., Massengill, L.W., Mendenhall, M.H., Rashkeev, S.N., Pantelides, S.T., Alles, M.A.

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Quasiclassical theory of spontaneous currents at surfaces and interfaces of d-wave superconductors von Amin, M.H.S., Omelyanchouk, A.N., Rashkeev, S.N., Coury, M., Zagoskin, A.M.

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Charge trapping in irradiated SOI wafers measured by second harmonic generation von Bongim Jun, Schrimpf, R.D., Fleetwood, D.M., White, Y.V., Pasternak, R., Rashkeev, S.N., Brunier, F., Bresson, N., Fouillat, M., Cristoloveanu, S., Tolk, N.H.

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Statistical modeling of radiation-induced proton transport in silicon: deactivation of dopant acceptors in bipolar devices von Rashkeev, S.N., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.T.

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Molecular electronics by the numbers von Pantelides, S.T., Di Ventra, M., Lang, N.D., Rashkeev, S.N.

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Dopants adsorbed as single atoms prevent degradation of catalysts von Borisevich, Albina Y, Wang, Sanwu, Rashkeev, Sergey N, Glazoff, Michael V, Sohlberg, Karl, Pennycook, Stephen J, Pantelides, Sokrates T

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Proton-induced defect generation at the Si-SiO/sub 2/ interface von Rashkeev, S.N., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.T.

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The E′ center and oxygen vacancies in SiO2 von Pantelides, S.T., Lu, Z.-Y., Nicklaw, C., Bakos, T., Rashkeev, S.N., Fleetwood, D.M., Schrimpf, R.D.

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Dual Behavior of H+at Si SiO2Interfaces: Mobility versus Trapping von Rashkeev, S.N.

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Implementing first principles calculations of defect migration in a fuel performance code for UN simulations von Kotomin, E.A., Mastrikov, Yu.A., Rashkeev, S.N., Van Uffelen, P.

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Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides von Pasternak, R., Chatterjee, A., Shirokaya, Y.V., Choi, B.K., Marka, Z., Miller, J.K., Albridge, R.G., Rashkeev, S.N., Pantelides, S.T., Schrimpf, R.D., Fleetwood, D.M., Tolk, N.H.

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Hydrogen in MOSFETs – A primary agent of reliability issues von Pantelides, Sokrates T., Tsetseris, L., Rashkeev, S.N., Zhou, X.J., Fleetwood, D.M., Schrimpf, R.D.

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Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling von Pantelides, Sokrates T., Tsetseris, L., Beck, M.J., Rashkeev, S.N., Hadjisavvas, G., Batyrev, I.G., Tuttle, B.R., Marinopoulos, A.G., Zhou, X.J., Fleetwood, D.M., Schrimpf, R.D.

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Reactions of hydrogen with Si-SiO2 interfaces von Pantelides, S.T, Rashkeev, S.N, Buczko, R, Fleetwood, D.M, Schrimpf, R.D

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Proton-induced defect generation at the Si-SiO2 interface von Rashkeev, S.N, Fleetwood, D.M, Schrimpf, R.D, Pantelides, S.T

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Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface? von Rashkeev, S.N., van Benthem, K., Pantelides, S.T., Pennycook, S.J.

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