Electronic transport in organometallic perovskite CH3NH3PbI3: The role of organic cation orientations von Berdiyorov, G. R., El-Mellouhi, F., Madjet, M. E., Alharbi, F. H., Rashkeev, S. N.

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First principles calculations for defects in U von Beeler, B, Good, B, Rashkeev, S, Deo, C, Baskes, M, Okuniewski, M

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Optimized Ni1−xAlxO hole transport layer for silicon solar cells von Halilov, S, Belayneh, M L, Hossain, M A, Abdallah, A A, Hoex, B, Rashkeev, S N

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Optimized Ni 1- x Al x O hole transport layer for silicon solar cells von Halilov, S, Belayneh, M L, Hossain, M A, Abdallah, A A, Hoex, B, Rashkeev, S N

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First-principles calculations of the stability and incorporation of helium, xenon and krypton in uranium von Beeler, B., Good, B., Rashkeev, S., Deo, C., Baskes, M., Okuniewski, M.

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Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to solving energy problems von Pennycook, S. J., Chisholm, M. F., Lupini, A. R., Varela, M., Borisevich, A. Y., Oxley, M. P., Luo, W. D., van Benthem, K., Oh, S.-H., Sales, D. L., Molina, S. I., García-Barriocanal, J., Leon, C., Santamaría, J., Rashkeev, S. N., Pantelides, S. T.

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Effects of hydrogen motion on interface trap formation and annealing von Rashkeev, S.N., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.T.

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Implementing first principles calculations of defect migration in a fuel performance code for UN simulations von Kotomin, E.A., Mastrikov, Yu.A., Rashkeev, S.N., Van Uffelen, P.

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Helium behavior in oxide nuclear fuels: First principles modeling von Gryaznov, D., Rashkeev, S., Kotomin, E.A., Heifets, E., Zhukovskii, Y.

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The E′ center and oxygen vacancies in SiO2 von Pantelides, S.T., Lu, Z.-Y., Nicklaw, C., Bakos, T., Rashkeev, S.N., Fleetwood, D.M., Schrimpf, R.D.

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Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling von Pantelides, Sokrates T., Tsetseris, L., Beck, M.J., Rashkeev, S.N., Hadjisavvas, G., Batyrev, I.G., Tuttle, B.R., Marinopoulos, A.G., Zhou, X.J., Fleetwood, D.M., Schrimpf, R.D.

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Reactions and diffusion of water and oxygen molecules in amorphous SiO2 von Bakos, T, Rashkeev, S N, Pantelides, S T

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Physical model for enhanced interface-trap formation at low dose rates von Rashkeev, S.N., Cirba, C.R., Fleetwood, D.M., Schrimpf, R.D., Witczak, S.C., Michez, A., Pantelides, S.T.

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Dual Nanoparticle/Substrate Control of Catalytic Dehydrogenation von Borisevich, A. Y., Wang, S., Rashkeev, S. N., Glazoff, M., Pennycook, S. J., Pantelides, S. T.

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Proton-induced defect generation at the Si-SiO)2)interface von Rashkeev, S N, Fleetwood, D M, Schrimpf, R D, Pantelides, S T

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Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances von Van Benthem, K., Rashkeev, Sergey N., Evans, M.H., McDonald, K., Wang, Sanwu, Di Ventra, M., Schrimpf, R.D., Chung, G.Y., Isaacs-Smith, Tamara, Franceschetti, A., Porter, L.M., Pennycook, S.J., Dhar, S., Fleetwood, D.M., Zhou, X.J., Buczko, Ryszard, Tin, Chin Che, Williams, John R., Wang, S.R., Weller, Robert A., Batyrev, I.G., Duscher, G., Tsetseris, L., Pantelides, Sokrates T., Feldman, Leonard C.

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Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface? von Rashkeev, S.N., van Benthem, K., Pantelides, S.T., Pennycook, S.J.

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Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling von Batyrev, I.G., Hughart, D., Durand, R., Bounasser, M., Tuttle, B.R., Fleetwood, D.M., Schrimpf, R.D., Rashkeev, S.N., Dunham, G.W., Law, M., Pantelides, S.T.

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Role of electronic versus atomic relaxations in Stokes shifts at defects in solids von Bakos, T, Rashkeev, S N, Pantelides, S T

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Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation von Glinka, Yu. D., Wang, W., Singh, S. K., Marka, Z., Rashkeev, S. N., Shirokaya, Y., Albridge, R., Pantelides, S. T., Tolk, N. H., Lucovsky, G.

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