Physico-chemical characterization of polyimide passivation layers for high power electronics applications von Spampinato, Valentina, Auditore, Alessandro, Tuccitto, Nunzio, Vitale, Roberta, Bellocchi, Gabriele, Galliano, Francesco, Rascunà, Simone, Arena, Giuseppe, Licciardello, Antonino

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Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures von Vivona, Marilena, Bellocchi, Gabriele, Lo Nigro, Raffaella, Rascunà, Simone, Roccaforte, Fabrizio

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Effects of Hydrogen Bonding in Silicon Nitride/Polyimide Passivation Bilayer in SiC Power Devices von Scandurra, Antonino, Bellocchi, Gabriele, Arena, Giuseppe, Rascunà, Simone, Calabretta, Michele, Boscaglia, Massimo, Saggio, Mario, Mineo, Giacometta, Iacono, Valentina, Boscarino, Stefano, Mirabella, Salvatore, Ruffino, Francesco, Grimaldi, Maria Grazia

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Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) von Vivona, Marilena, Giannazzo, Filippo, Bellocchi, Gabriele, Panasci, Salvatore Ethan, Agnello, Simonpietro, Badalà, Paolo, Bassi, Anna, Bongiorno, Corrado, Di Franco, Salvatore, Rascunà, Simone, Roccaforte, Fabrizio

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Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact von Badalà, Paolo, Rascunà, Simone, Cafra, Brunella, Bassi, Anna, Smecca, Emanuele, Zimbone, Massimo, Bongiorno, Corrado, Calabretta, Cristiano, La Via, Francesco, Roccaforte, Fabrizio, Saggio, Mario, Franco, Giovanni, Messina, Angelo, La Magna, Antonino, Alberti, Alessandra

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Toward a Metal-Free Contact Based on Multilayer Epitaxial Graphene on 4H-SiC von Crupi, Isodiana, Bellocchi, Gabriele, Vabres, Roberto, Bongiorno, Corrado, Badala, Paolo, Macaluso, Roberto, Mosca, Mauro, Rascuna, Simone

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Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O von Roccaforte, Fabrizio, Rascunà, Simone, Giannazzo, Filippo, Fiorenza, Patrick, Di Franco, Salvatore, Saggio, Mario

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Industrial Approach for Next Generation of Power Devices Based on 4H-SiC von Roccaforte, Fabrizio, Zanetti, Edoardo, Rascunà, Simone, Guarnera, Alfio, Fiorenza, Patrick, Saggio, Mario, Frazzetto, Alessia M., Giannazzo, Filippo, Salinas, Dario

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Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing von Rascunà, Simone, Lo Nigro, Raffaella, Saggio, Mario, Di Franco, Salvatore, Vivona, Marilena, Greco, Giuseppe, Roccaforte, Fabrizio, Giannazzo, Filippo

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Structural and Electrical Characterization of Ni-Based Ohmic Contacts on 4H-SiC Formed by Solid-State Laser Annealing von Bellocchi, Gabriele, Badalà, Paolo, Smecca, Emanuele, Bassi, Anna, Castorina, Silvia, Tringali, Cristina, La Magna, Antonino, Bongiorno, Corrado, Rascunà, Simone, Carria, Egidio, Alberti, Alessandra

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Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology von Rascunà, Simone, Vivona, Marilena, Lo Nigro, Raffaella, Saggio, Mario, Greco, Giuseppe, Roccaforte, Fabrizio, Giannazzo, Filippo

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Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing von Badalà, Paolo, Fisicaro, Giuseppe, La Magna, Antonino, Deretzis, Ioannis, Pennisi, Fabiana Maria, Pagano, Daniele, Alberti, Alessandra, Bellocchi, Gabriele, Enachescu, Marius, Sanzaro, Salvatore, Bassi, Anna, Boscaglia, Massimo, Bongiorno, Corrado, Vasquez, Patrizia, Rascunà, Simone

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Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges von Brezeanu, Gheorghe, Pristavu, Gheorghe, Draghici, Florin, Pascu, Razvan, Della Corte, Francesco, Rascuna, Simone

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Exploring UV-Laser Effects on Al-Implanted 4H-SiC von Bellocchi, Gabriele, Rascunà, Simone, Badalà, Paolo, Vivona, Marilena, Roccaforte, Fabrizio, Agnello, Simonpietro, Bongiorno, Corrado, Bassi, Anna, Di Franco, Salvatore, Panasci, Salvatore Ethan, Giannazzo, Filippo

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Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC von Rascunà, Simone, Vivona, Marilena, Bongiorno, Corrado, Lo Nigro, Raffaella, Saggio, Mario, Scalese, Silvia, Greco, Giuseppe, Di Franco, Salvatore, Roccaforte, Fabrizio

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Comparative Study of the Current Transport Mechanisms in Ni2Si Ohmic Contacts on n- and p-Type Implanted 4H-SiC von Zanetti, Edoardo, Rascunà, Simone, Guarnera, Alfio, Frazzetto, Alessia M., Saggio, Mario, Di Franco, Salvatore, Vivona, Marilena, Greco, Giuseppe, Roccaforte, Fabrizio, Giannazzo, Filippo

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OVERVOLTAGE PROTECTION DEVICE von SIMONNET, Jean-Michel, NGO, Sophie, RASCUNÀ, Simone

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Overvoltage protection device von Ngo, Sophie, Rascunà, Simone, Simonnet, Jean-Michel

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CONTEXTUAL FORMATION OF A JB DIODE AND A SCHOTTKY DIODE IN A MPS DEVICE, AND MPS DEVICE von GRECO, Giuseppe, GIANNAZZO, Filippo, ROCCAFORTE, Fabrizio, RASCUNÀ, Simone

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CONTEXTUAL FORMATION OF A JB DIODE AND A SCHOTTKY DIODE IN A MPS DEVICE, AND MPS DEVICE von GRECO, Giuseppe, GIANNAZZO, Filippo, ROCCAFORTE, Fabrizio, RASCUNÀ, Simone

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