Toward a Metal-Free Contact Based on Multilayer Epitaxial Graphene on 4H-SiC von Crupi, Isodiana, Bellocchi, Gabriele, Vabres, Roberto, Bongiorno, Corrado, Badala, Paolo, Macaluso, Roberto, Mosca, Mauro, Rascuna, Simone

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Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges von Brezeanu, Gheorghe, Pristavu, Gheorghe, Draghici, Florin, Pascu, Razvan, Della Corte, Francesco, Rascuna, Simone

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Physico-chemical characterization of polyimide passivation layers for high power electronics applications von Spampinato, Valentina, Auditore, Alessandro, Tuccitto, Nunzio, Vitale, Roberta, Bellocchi, Gabriele, Galliano, Francesco, Rascunà, Simone, Arena, Giuseppe, Licciardello, Antonino

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Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures von Vivona, Marilena, Bellocchi, Gabriele, Lo Nigro, Raffaella, Rascunà, Simone, Roccaforte, Fabrizio

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Effects of Hydrogen Bonding in Silicon Nitride/Polyimide Passivation Bilayer in SiC Power Devices von Scandurra, Antonino, Bellocchi, Gabriele, Arena, Giuseppe, Rascunà, Simone, Calabretta, Michele, Boscaglia, Massimo, Saggio, Mario, Mineo, Giacometta, Iacono, Valentina, Boscarino, Stefano, Mirabella, Salvatore, Ruffino, Francesco, Grimaldi, Maria Grazia

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Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) von Vivona, Marilena, Giannazzo, Filippo, Bellocchi, Gabriele, Panasci, Salvatore Ethan, Agnello, Simonpietro, Badalà, Paolo, Bassi, Anna, Bongiorno, Corrado, Di Franco, Salvatore, Rascunà, Simone, Roccaforte, Fabrizio

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Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact von Badalà, Paolo, Rascunà, Simone, Cafra, Brunella, Bassi, Anna, Smecca, Emanuele, Zimbone, Massimo, Bongiorno, Corrado, Calabretta, Cristiano, La Via, Francesco, Roccaforte, Fabrizio, Saggio, Mario, Franco, Giovanni, Messina, Angelo, La Magna, Antonino, Alberti, Alessandra

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Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O von Roccaforte, Fabrizio, Rascunà, Simone, Giannazzo, Filippo, Fiorenza, Patrick, Di Franco, Salvatore, Saggio, Mario

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Industrial Approach for Next Generation of Power Devices Based on 4H-SiC von Roccaforte, Fabrizio, Zanetti, Edoardo, Rascunà, Simone, Guarnera, Alfio, Fiorenza, Patrick, Saggio, Mario, Frazzetto, Alessia M., Giannazzo, Filippo, Salinas, Dario

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Impact of Phosphorus Implantation on the Electrical Properties of SiO sub(2)/4H-SiC Interfaces Annealed in N sub(2) O von Fiorenza, Patrick, Franco, Salvatore Di, Giannazzo, Filippo, Rascuna, Simone, Saggio, Mario, Roccaforte, Fabrizio

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Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing von Rascunà, Simone, Lo Nigro, Raffaella, Saggio, Mario, Di Franco, Salvatore, Vivona, Marilena, Greco, Giuseppe, Roccaforte, Fabrizio, Giannazzo, Filippo

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WIDE BAND GAP SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING A JBS DIODE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND MANUFACTURING METHOD THEREOF von RASCUNA', Simone

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DISPOSITIVO ELETTRONICO A SEMICONDUTTORE AD AMPIA BANDA PROIBITA COMPRENDENTE UN DIODO JBS AVENTE MIGLIORATE CARATTERISTICHE ELETTRICHE E RELATIVO PROCEDIMENTO DI FABBRICAZIONE von RASCUNA', SIMONE

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Silicon carbide diode with reduced voltage drop, and manufacturing method thereof von Rascuna, Simone, Chibbaro, Claudio

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SILICON CARBIDE DIODE WITH REDUCED VOLTAGE DROP, AND MANUFACTURING METHOD THEREOF von CHIBBARO, Claudio, RASCUNA, Simone

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Silicon carbide diode with reduced voltage drop, and manufacturing method thereof von Rascuna, Simone, Chibbaro, Claudio

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Comparative Study of the Current Transport Mechanisms in Ni sub(2)Si Ohmic Contacts on n- and p-Type Implanted 4H-SiC von Vivona, Marilena, Greco, Giuseppe, Di Franco, Salvatore, Giannazzo, Filippo, Roccaforte, Fabrizio, Frazzetto, Alessia, Rascuna, Simone, Zanetti, Edoardo, Guarnera, Alfio, Saggio, Mario

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MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING IMPROVED RELIABILITY, AND RELATED ELEMENT, ELECTRONIC DEVICE AND ELECTRONIC APPARATUS von SAGGIO, Mario Giuseppe, RASCUNA', Simone

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MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING IMPROVED RELIABILITY, AND RELATED ELEMENT, ELECTRONIC DEVICE AND ELECTRONIC APPARATUS von SAGGIO, Mario Giuseppe, RASCUNA', Simone

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Semiconductor MPS diode with reduced current-crowding effect and manufacturing method thereof von Rascuna′, Simone, Saggio, Mario Giuseppe

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