Growth and characterization of broad spectrum infrared emitting GaInAsP/InP heterostructures von Rakovics, V., Nádas, J., Réti, I., Dücső, Cs, Battistig, G.

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High-power LEDs based on InGaAsP/InP heterostructures von Rakovics, V., Imenkov, A. N., Sherstnev, V. V., Serebrennikova, O. Yu, Il’inskaya, N. D., Yakovlev, Yu. P.

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InP Schottky junctions for zero bias detector diodes von Horváth, Zs.J, Rakovics, V, Szentpáli, B, Püspöki, S, Žd’ánský, K

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Handbook of Model Predictive Control von Raković, Sasa V, Levine, William S

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Single-step growth of InGaAsP/InP laser array on patterned InP substrate von Rakovics, V, Serényi, M, Püspöki, S

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Spectral characteristics of InGaAsP/InP infrared emitting diodes grown by LPE von Rakovics, V., Püspöki, S., Balázs, J., Réti, I., Frigeri, C.

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Single-step growth of InGaAsP/InP laser array on patterned InP substrate von RAKOVICS, V

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Schottky junctions on n-type InP for zero bias microwave detectors von Horváth, Zs. J., Rakovics, V., Szentpáli, B., Püspöki, S.

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Liquid phase epitaxy growth and characterization of Ga1-xInxAsySb1-y quaternary alloys von RAKOVICS, V, TOTH, A. L, PODÖR, B, FRIGERI, C, BALAZS, J, HORVATH, Z. E

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Investigation of CdS/InP heterojunction prepared by chemical bath deposition von Rakovics, V., Horváth, Zs. J., Horváth, Zs. E., Bársony, I., Frigeri, C., Besagni, T.

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Experimental determination of the inelastic mean free path of electrons in GaP and InAs von Gergely, G., Menyhard, M., Gurban, S., Benedek, Zs, Daroczi, Cs, Rakovics, V., Tóth, J., Varga, D., Krawczyk, M., Jablonski, A.

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Schottky contacts to InP von Horváth, Zs. J., Ayyildiz, E., Rakovics, V., Cetin, H., Põdör, B.

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Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures von Horváth, Zs. J., Orlov, L. K., Rakovics, V., Ivina, N. L., Tóth, A. L., Demidov, E. S., Riesz, F., Vdovin, V. I., Pászti, Z.

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Near-infrared transmission measurements on InGaAsP/InP LED wafers von Rakovics, V., Balázs, J., Réti, I., Püspöki, S., Lábadi, Z.

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Laser diode pump sources for blue up-conversion fibre laser von Püspöki, S, Rakovics, V, Koltai, F, Nagy, G, Serényi, M

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High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm von Rakovics, V., Serényi, M., Koltai, F., Püspöki, S., Lábadi, Z.

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Selective liquid-phase epitaxy growth of InxGa1-xAsyP1-y on structured GaAs(100) substrates von LABADI, Z, RAKOVICS, V, TOTH, A. L

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Al/a-SiGe:H/c-Si m-i-p diodes - a new type of heterodevices von Horváth, Zs. J., Serényi, M., Ádám, M., Szabó, I., Badalján, E., Rakovics, V.

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Optical investigation of InGaAsP/InP double heterostructure wafers von Rakovics, V

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LPE growth of GaAs-GaAlAs superlattices von Lendvay, E., Görög, T., Rakovics, V.

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