Role of transmission electron microscopy in the semiconductor industry for process development and failure analysis von Rai, Raghaw S., Subramanian, Swaminathan

Volltext

Ferroelectric Domain Structure of Lanthanum-Modified Lead Titanate Ceramics von Demczyk, Brain G., Rai, Raghaw S., Thomas, Gareth

Volltext

Effect of lead acetate in the preparation of the Lindlar catalyst von Ulan, Judith G, Kuo, Emilio, Maier, Wilhelm F, Rai, Raghaw S, Thomas, Gareth

Volltext

Thermodynamic stability of high- K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2 von Gutowski, Maciej, Jaffe, John E., Liu, Chun-Li, Stoker, Matt, Hegde, Rama I., Rai, Raghaw S., Tobin, Philip J.

Volltext

Fermi-level pinning at the polysilicon/metal oxide interface-Part I von Hobbs, C.C., Fonseca, L.R.C., Knizhnik, A., Dhandapani, V., Samavedam, S.B., Taylor, W.J., Grant, J.M., Dip, L.G., Triyoso, D.H., Hegde, R.I., Gilmer, D.C., Garcia, R., Roan, D., Lovejoy, M.L., Rai, R.S., Hebert, E.A., Hsing-Huang Tseng, Anderson, S.G.H., White, B.E., Tobin, P.J.

Volltext

Surface and interface roughness of ultrathin nitric oxide oxynitride gate dielectric von HEGDE, R. I, MAITI, B, RAI, R. S, REID, K. G, TOBIN, P. J

Volltext

Fermi-level pinning at the polysilicon/metal-oxide interface-Part II von Hobbs, C.C., Fonseca, L.R.C., Knizhnik, A., Dhandapani, V., Samavedam, S.B., Taylor, W.J., Grant, J.M., Dip, L.G., Triyoso, D.H., Hegde, R.I., Gilmer, D.C., Garcia, R., Roan, D., Lovejoy, M.L., Rai, R.S., Hebert, E.A., Hsing-Huang Tseng, Anderson, S.G.H., White, B.E., Tobin, P.J.

Volltext

Metamorphosis of palladium and its relation to selectivity in the Rosenmund reaction von Maier, Wilhelm F, Chettle, Susan J, Rai, Raghaw S, Thomas, Gareth

Volltext

Specific site cross-sectional sample preparation using focused ion beam for transmission electron microscopy von Schraub, David M., Rai, Raghaw S.

Volltext

Crystallization Behavior of a Glass in the Y2O3-SiO2-AlN System von DINGER, TIMOTHY R., RAI, RAGHAW S., THOMAS, GARETH

Volltext

Characterizing III–V heteroepitaxial structures von Rai, Raghaw S., Parsons, Craig A.

Volltext

Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method von RAI RAGHAW S, NOBLE ROSS E, MATHEW LEO

Volltext bestellen

Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method von Mathew, Leo, Noble, Ross E, Rai, Raghaw S

Volltext bestellen

Method for improving self-aligned silicide extendibility with spacer recess using an aggregated spacer recess etch (ASRE) integration von Srivastava, Anadi, Hall, Mark D, Rai, Raghaw S, Yanez, Jesse

Volltext bestellen

Method for improving self-aligned silicide extendibility with spacer recess using an aggregated spacer recess etch (ASRE) integration von SRIVASTAVA ANADI, RAI RAGHAW S, HALL MARK D, YANEZ JESSE

Volltext bestellen

Crystallization Behavior of a Glass in the Y 2 O 3 ‐SiO 2 ‐AlN System von DINGER, TIMOTHY R., RAI, RAGHAW S., THOMAS, GARETH

Volltext

Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method von RAI RAGHAW S, NOBLE ROSS E, MATHEW LEO

Volltext bestellen

Method for improving self-aligned silicide extendibility with spacer recess using an aggregated spacer recess etch (ASRE) integration von SRIVASTAVA ANADI, RAI RAGHAW S, HALL MARK D, YANEZ JESSE

Volltext bestellen

Crystallization behavior of a glass in the Y sub 2 O sub 3 -SiO sub 2 -AlN system von Dinger, Timothy R, Rai, Raghaw S

Volltext

Crystallization behavior of a glass in the Y2O3-SiO2-AIN system von DINGER, T. R, RAI, R. S, THOMAS, G

Volltext